accelforge 0.0.1__py3-none-any.whl

examples/arches/compute_in_memory/memory_cells/rram_example.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: RRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  40
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 0.25
+-CellCapacitanceAdjust (F): 0 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 1
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 2
+-SRAMCellPMOSWidth (F): 2
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 25e4
+-ResistanceOff (ohm): 1e6
+
+# Set parameters
+-SetVoltage (V): 1.75
+-SetPulse (ns): 8520
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.1
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: CMOS   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/rram_isaac_isca_2016.yaml

@@ -0,0 +1,64 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: RRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  16 # NeuroSim gets mad if it's too small. Doesn't matter too
+                     # much because this is pretty small in the overall accelerator.
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 0.3 # Correct for cell area scaling
+-CellCapacitanceAdjust (F): 0.0e-15 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 4
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 2
+-SRAMCellPMOSWidth (F): 2
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1333
+-ResistanceOff (ohm): 20000
+
+# Set parameters
+-SetVoltage (V): 2 # From PRIME
+-SetPulse (ns): 40
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.2 # From PRIME
+-ReadPulse (ns): 1
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/rram_neurosim_default.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: RRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  48
+-CellAspectRatio: 0.333 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 1
+-CellCapacitanceAdjust (F): 0 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 10
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: current # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 2
+-SRAMCellPMOSWidth (F): 2
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 6e3
+-ResistanceOff (ohm): 9e5
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 50
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.5
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: CMOS   # CMOS or None
+-AccessTransistorResistance (ohm): 1.95e5
+-AccessVoltage (V): 1.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/rram_raella_isca_2023.yaml

@@ -0,0 +1,70 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: RRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  16 # We used 5.5 in the paper, but NeuroSim gets mad if it's too small
+                     # 5.5 = 1.5 (from ISAAC) + 4F^2 access transistor. Doesn't matter too
+                     # much because this is pretty small in the overall accelerator.
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 0.3 # Correct for cell area scaling
+-CellCapacitanceAdjust (F): 0.0e-15 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 4
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 2
+-SRAMCellPMOSWidth (F): 2
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1333
+-ResistanceOff (ohm): 20000
+# WARNING: ON resistance is set lower than it actually is in-array.
+# This is because NeuroSim adds ~640 ohms of wire resistance on average,
+# but RAELLA's 2T2R add/subtract is very local and doesn't have this wire
+# resistance. So we pre-subtract the wire resistance here to get our 1333-ohm
+# resistance.
+
+# Set parameters
+-SetVoltage (V): 2 # From PRIME
+-SetPulse (ns): 40
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.2 # From PRIME
+-ReadPulse (ns): 1
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: CMOS   # Comment this line for no access transistor
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/rram_wan_nature_2022.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: RRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  125.73964497
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 1
+-CellCapacitanceAdjust (F): -0.1e-15 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 4
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 2
+-SRAMCellPMOSWidth (F): 2
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 25e4
+-ResistanceOff (ohm): 1e6
+
+# Set parameters
+-SetVoltage (V): 1.75
+-SetPulse (ns): 8520
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.5
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/sram_colonnade_jssc_2021.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: SRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  1
+
+# Device size
+-CellArea (F^2):  130
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 4.5
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 1
+-CellCapacitanceAdjust (F): 0 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 7
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 5
+-SRAMCellPMOSWidth (F): 5
+-MinSenseVoltage (mV): 20
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1000
+-ResistanceOff (ohm): 100000
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 10
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.2
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.2 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/sram_example.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: SRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  80
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 0.1
+-CellCapacitanceAdjust (F): 0 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 1
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 10
+-SRAMCellPMOSWidth (F): 10
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1000
+-ResistanceOff (ohm): 100000
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 10
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.1
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/sram_jia_jssc_2020.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: SRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  426
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 6.5
+-CellCapacitanceAdjust (F): 0 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 4
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 10
+-SRAMCellPMOSWidth (F): 10
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1000
+-ResistanceOff (ohm): 100000
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 10
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.1
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/sram_sinangil_jssc_2021.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: SRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  2
+
+# Device size
+-CellArea (F^2):  1080
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 0.1
+-CellCapacitanceAdjust (F): 0e-15 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 1
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 10
+-SRAMCellPMOSWidth (F): 10
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1000
+-ResistanceOff (ohm): 100000
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 10
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.1
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width

examples/arches/compute_in_memory/memory_cells/sram_wang_vlsi_2022.yaml

@@ -0,0 +1,63 @@
+# -----------------------------------------------------------------------------
+# Device type and top-level parameters
+
+# Device type
+-MemCellType: SRAM  # SRAM or RRAM
+# -ReadMode: current  # Comment this line for voltage
+-DeviceRoadmap -1LP 1HP 2LSTP:  -1
+
+# Device size
+-CellArea (F^2):  400
+-CellAspectRatio: 1 # Width/Height
+
+# Calibration parameters
+-CellReadLeakEnergyMultiplier: 1
+-CellWriteEnergyMultiplier: 1
+-CellCapacitanceMultiplier: 1
+-CellCapacitanceAdjust (F): 3e-15 # Capacitance = (Nominal Capacitance) * Multiplier + Adjust
+
+# Used for RRAM with access transistors or SRAM
+-AccessCMOSWidth (F): 1
+
+# Affects NeuroSim-realized ADCs. NOTE: Most models use ADC plug-in ADCs and
+# this has little to no effect.
+-ReadMode: voltage # voltage or current
+
+# -----------------------------------------------------------------------------
+# SRAM-only parameters
+# SRAM configuration. Only used if MemCellType is SRAM
+-SRAMCellNMOSWidth (F): 10
+-SRAMCellPMOSWidth (F): 10
+-MinSenseVoltage (mV): 20
+
+# -----------------------------------------------------------------------------
+# RRAM-only parameters
+# RRAM configuration. Only used if MemCellType is RRAM
+-ResistanceOn (ohm): 1000
+-ResistanceOff (ohm): 100000
+
+# Set parameters
+-SetVoltage (V): 2
+-SetPulse (ns): 10
+# -SetCurrent (uA): 400 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetEnergy (pJ): 8  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -SetPower (uW): 800   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Read parameters
+-ReadVoltage (V): 0.1
+-ReadPulse (ns): 2
+# -ReadCurrent (uA): 40 # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadEnergy (pJ): 0.008  # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+# -ReadPower (uW): 8   # OVERWRITES PREVIOUS LINES IF UNCOMMENTED
+
+# Access transistor parameters
+-AccessType: None   # CMOS or None
+-AccessTransistorResistance (ohm): 1000
+-AccessVoltage (V): 0.1 # Access transistor voltage
+
+# -----------------------------------------------------------------------------
+# Other parameters that can be set via cell component attributes:
+
+# "voltage" is the global supply voltage
+# "threshold_voltage" is the global threshold voltage
+# "read_pulse_width" is the read pulse width