ViennaPS 3.2.0__cp310-cp310-win_amd64.whl → 3.3.0__cp310-cp310-win_amd64.whl

{viennaps-3.2.0.dist-info → viennaps-3.3.0.dist-info}/METADATA

@@ -1,6 +1,6 @@
 Metadata-Version: 2.1
 Name: ViennaPS
-Version: 3.2.0
+Version: 3.3.0
 Summary: Semiconductor fabrication process simulation library
 License: Parts of the code (located in the 'external/' subfolder) have different
         licenses. The individual licenses apply for this specific part. Please consult
@@ -30,7 +30,7 @@ Project-URL: Homepage, https://viennatools.github.io/ViennaPS/
 Project-URL: Documentation, https://viennatools.github.io/ViennaPS/
 Project-URL: Repository, https://github.com/ViennaTools/ViennaPS
 Project-URL: Issues, https://github.com/ViennaTools/ViennaPS/issues
-Requires-Dist: ViennaLS
+Requires-Dist: ViennaLS>=4.2.1
 Description-Content-Type: text/markdown
 
 <div align="center">
@@ -68,13 +68,13 @@ Releases are tagged on the master branch and available in the [releases section]
 
 ### Dependencies (installed automatically)
 
-* [ViennaCore](https://github.com/ViennaTools/viennacore) >= 1.1.0
+* [ViennaCore](https://github.com/ViennaTools/viennacore) >= 1.2.0
 
-* [ViennaLS](https://github.com/ViennaTools/viennals) >= 4.0.1
-  * [ViennaHRLE](https://github.com/ViennaTools/viennahrle) >= 0.4.0
+* [ViennaLS](https://github.com/ViennaTools/viennals) >= 4.2.1
+  * [ViennaHRLE](https://github.com/ViennaTools/viennahrle) >= 0.5.0
   * [VTK](https://vtk.org/) >= 9.0.0
 
-* [ViennaRay](https://github.com/ViennaTools/viennaray) >= 3.1.0
+* [ViennaRay](https://github.com/ViennaTools/viennaray) >= 3.1.4
   * [Embree](https://www.embree.org/) >= 4.0.0
 
 * [ViennaCS](https://github.com/ViennaTools/viennacs) >= 1.0.0
@@ -133,7 +133,7 @@ We recommend using [CPM.cmake](https://github.com/cpm-cmake/CPM.cmake) to consum
 
 * Installation with CPM
   ```cmake
-  CPMAddPackage("gh:viennatools/viennaps@3.2.0")
+  CPMAddPackage("gh:viennatools/viennaps@3.3.0")
   ```
 
 * With a local installation
@@ -164,15 +164,15 @@ cmake --build build
 The examples can then be executed in their respective build folders with the config files, e.g.:
 ```bash
 cd examples/exampleName
-./ExampleName.bat config.txt # (Windows)
-./ExampleName config.txt # (Other)
+./exampleName.bat config.txt # (Windows)
+./exampleName config.txt # (Other)
 ```
 
 Individual examples can also be build by calling `make` in their respective build folder. An equivalent Python script, using the ViennaPS Python bindings, is also given for each example. 
 
 ### Trench Deposition
 
-This example focuses on a particle deposition process within a trench geometry. By default, the simulation presents a 2D representation of the trench. Nevertheless, users have the flexibility to conduct 3D simulations by adjusting the value of the constant _D_ in __trenchDeposition.cpp__ to 3. Customization of process and geometry parameters is achieved through the __config.txt__ file. The accompanying image illustrates instances of the trench deposition process, showcasing variations in the particle sticking probability _s_.
+This [example](https://github.com/ViennaTools/ViennaPS/tree/master/examples/trenchDeposition) focuses on a particle deposition process within a trench geometry. By default, the simulation presents a 2D representation of the trench. Nevertheless, users have the flexibility to conduct 3D simulations by adjusting the value of the constant _D_ in __trenchDeposition.cpp__ to 3. Customization of process and geometry parameters is achieved through the __config.txt__ file. The accompanying image illustrates instances of the trench deposition process, showcasing variations in the particle sticking probability _s_.
 
 <div align="center">
   <img src="assets/deposition.svg" width=700 style="background-color:white;">
@@ -180,22 +180,32 @@ This example focuses on a particle deposition process within a trench geometry.
 
 ### SF<sub>6</sub>O<sub>2</sub> Hole Etching
 
-This example demonstrates a hole etching process with a SF<sub>6</sub>O<sub>2</sub> plasma etching chemistry with ion bombardment. The process and geometry parameters can be varied in the __config.txt__ file. 
-Below the results after 10, 20, and 30 seconds of etching are shown.
+This [example](https://github.com/ViennaTools/ViennaPS/tree/master/examples/holeEtching) demonstrates a hole etching process with a SF<sub>6</sub>O<sub>2</sub> plasma etching chemistry with ion bombardment. The process is controlled by various parameters, including geometry and plasma conditions, which can be adjusted in the __config.txt__ file.
+
+The image presents the results of different flux configurations, as tested in _testFluxes.py_. Each structure represents a variation in flux conditions, leading to differences in hole shape, depth, and profile characteristics. The variations highlight the influence of ion and neutral fluxes on the etching process.
 
 <div align="center">
-  <img src="assets/hole_etching.svg" width=700 style="background-color:white;">
+  <img src="assets/sf6o2_results.png" width=700 style="background-color:white;">
 </div>
 
-By changing the dimension of the hole etching example (_D = 2_), we can easily simulate the profile of a trench etching process with the same plasma chemistry. Here we can, for example, vary the mask tapering angle to observe increased micro-trenching, as shown below.
+### Bosch Process
+
+This [example](https://github.com/ViennaTools/ViennaPS/tree/master/examples/boschProcess) compares different approaches to simulating the Bosch process, a deep reactive ion etching (DRIE) technique. The three structures illustrate how different modeling methods influence the predicted etch profile.
+
+- Left: The structure generated through process emulation, which captures the characteristic scalloping effect of the Bosch process in a simplified yet effective way.
+- Middle: The result of a simple simulation model, which approximates the etching dynamics but may lack finer physical details.
+- Right: The outcome of a more physical simulation model, leading to a more realistic etch profile.
+  
+This comparison highlights the trade-offs between computational efficiency and physical accuracy in DRIE simulations.
 
 <div align="center">
-  <img src="assets/sidewall_tapering.svg" width=700 style="background-color:white;">
+  <img src="assets/bosch_process.png" width=700 style="background-color:white;">
 </div>
 
+
 ### Anisotropic Processes
 
-In the anisotropic process model, the etch or deposition rates are dependent on the crystallographic directions of the surface. This enables the accurate modeling of intricate processes like epitaxial growth or anisotropic wet etching. Basic examples, illustrating these processes are provided with the library and shown below.
+In the anisotropic process model, the etch or deposition rates are dependent on the crystallographic directions of the surface. This enables the accurate modeling of intricate processes like [epitaxial growth](https://github.com/ViennaTools/ViennaPS/tree/master/examples/selectiveEpitaxy) or [anisotropic wet etching](https://github.com/ViennaTools/ViennaPS/tree/master/examples/cantileverWetEtching). Basic examples, illustrating these processes are provided with the library and shown below.
 
 <div align="center">
   <img src="assets/anisotropic_process.svg" width=700 style="background-color:white;">
@@ -203,7 +213,7 @@ In the anisotropic process model, the etch or deposition rates are dependent on
 
 ### Redeposition During Selective Etching
 
-This example demonstrates capturing etching byproducts and the subsequent redeposition during a selective etching process in a Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> stack. The etching byproducts are captured in a cell set description of the etching plasma. To model the dynamics of these etching byproducts, a convection-diffusion equation is solved on the cell set using finite differences. The redeposition is then captured by adding up the byproducts in every step and using this information to generate a velocity field on the etched surface. 
+This [example](https://github.com/ViennaTools/ViennaPS/tree/master/examples/oxideRegrowth) demonstrates capturing etching byproducts and the subsequent redeposition during a selective etching process in a Si<sub>3</sub>N<sub>4</sub>/SiO<sub>2</sub> stack. The etching byproducts are captured in a cell set description of the etching plasma. To model the dynamics of these etching byproducts, a convection-diffusion equation is solved on the cell set using finite differences. The redeposition is then captured by adding up the byproducts in every step and using this information to generate a velocity field on the etched surface. 
 
 <div align="center">
   <img src="assets/redeposition.gif" width=700 style="background-color:white;">
@@ -225,7 +235,7 @@ ctest -E "Benchmark|Performance" --test-dir build
 ## Application
 
 > [!WARNING] 
-> The ViennaPS application is no longer updated with new functionalities added to ViennaPS after release 1.2.0. Please use the Python bindings instead.
+> The ViennaPS application is no longer updated with new functionalities added to ViennaPS after release 1.2.0. Please use the __Python bindings__ instead.
 
 It is also possible to build an application which can parse a custom configuration file and execute pre-defined processes. The application can be built using CMake:
 
@@ -243,7 +253,7 @@ The configuration file must obey a certain structure in order to be parsed corre
 
 ## Contributing
 
-If you want to contribute to ViennaCS, make sure to follow the [LLVM Coding guidelines](https://llvm.org/docs/CodingStandards.html).
+If you want to contribute to ViennaPS, make sure to follow the [LLVM Coding guidelines](https://llvm.org/docs/CodingStandards.html).
 
 Make sure to format all files before creating a pull request:
 ```bash
@@ -253,7 +263,7 @@ cmake --build build --target format
 
 ## Authors
 
-Current contributors: Tobias Reiter, Noah Karnel, Julius Piso
+Current contributors: Tobias Reiter, Noah Karnel, Lado Filipovic
 
 Contact us via: viennatools@iue.tuwien.ac.at
 

viennaps-3.3.0.dist-info/RECORD

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viennaps2d/__init__.py

@@ -27,8 +27,10 @@ def _windows_dll_path():
 if sys.platform == "win32":
     _windows_dll_path()
 
-from .viennaps2d import *
 import viennals2d as ls
+from viennals2d import IntegrationSchemeEnum as IntegrationScheme
+from viennals2d import BoundaryConditionEnum as BoundaryType
+from .viennaps2d import *
 
 # Config file reader helper function
 def ReadConfigFile(fileName: str):

viennaps2d/__init__.pyi

@@ -0,0 +1,3 @@
+from .viennaps2d import *
+
+def ReadConfigFile(fileName: str): ...