@vessel-dsp/compiler 0.5.0 → 0.6.0

package/dist/registry-data/bjt.js

@@ -0,0 +1,1350 @@
+// BJT registry data: wave-1 discrete fill.
+//
+// One value per parameter; a parameter with no datasheet citation is not loadable, so it
+// is omitted here and the stamp falls back to the class default (never a guess):
+//
+// - `saturationCurrent`: derived ONLY by form (1), IS = Ic * exp(-Vbe / Vt) with n = 1 from
+//   a printed Vbe at a stated Ic, OR read directly from a manufacturer-published SPICE
+//   model (`manufacturer-model`, preferred over a derived value where one exists -- owner
+//   ruling 2026-10-19). A printed MIN-MAX VBE(sat) range becomes one Vbe by its
+//   arithmetic midpoint under form (2) ("a printed bin or range becomes one value by its
+//   midpoint"), quoted with page and conditions so anyone can recompute it. A MAX-only Vbe
+//   with no MIN is a limit, not a range, and yields no IS (2N5089/2SC1815; 2N5088's IS is
+//   from its model, not from the MAX-only VBE(on) row).
+// - `forwardBeta`: derived by form (2) from a printed hFE bin at a stated Vce/Ic, geometric
+//   mean for gains. Bare MIN-only hFE rows are never used alone; the small-signal full-range
+//   row is preferred. Rank suffixes (2SC1815-Y/BL) are separate entries with their rank's
+//   midpoint, never aliases of the unbinned part -- a rank is a different gain, not another
+//   spelling. `MPS-A18` needs no alias: it folds to the same id as `MPSA18`.
+// - `reverseBeta`, `leakageAmps`: omitted for every part below. No BJT sheet in this wave
+//   prints reverse beta at all, and every leakage row is MAX-only (a limit, not a value).
+//   The stamp keeps reverseBeta 1 and leakageAmps 0.
+// - `thermalVoltage`: omitted for every part below. It is kT/q at room temperature, not a
+//   per-part datasheet figure; no datasheet basis exists, so the class default stands.
+import { definePartData } from "./loader.js";
+export const bjtRegistryRecords = definePartData([
+    {
+        partIds: ["2N3904"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.5150964e-15,
+                basis: "derived",
+                source: "2N3904/datasheets/2n3904.pdf (onsemi 2N3904/D, Oct 2024 Rev. 3) p2, ELECTRICAL " +
+                    "CHARACTERISTICS: 'Base-Emitter Saturation Voltage VBE(sat), IC = 10 mA, IB = 1.0 mA, " +
+                    "MIN 0.65 MAX 0.85 V' (no TYP printed; the 50 mA row is MAX-only 0.95 V)",
+                derivation: "Printed VBE(sat) range 0.65-0.85 V at IC = 10 mA, IB = 1.0 mA; arithmetic midpoint " +
+                    "0.75 V (form 2, printed range, no TYP); IS = IC * exp(-Vbe / Vt) with n = 1 " +
+                    "(form 1): 0.01 * exp(-0.75 / 0.025852) = 2.5150964e-15.",
+            },
+            forwardBeta: {
+                value: 173.2050808,
+                basis: "derived",
+                source: "2N3904/datasheets/2n3904.pdf (onsemi 2N3904/D, Oct 2024 Rev. 3) p2: 'DC Current Gain, " +
+                    "IC = 10 mA, VCE = 1.0 V, MIN 100 MAX 300' (the 0.1/1.0/50/100 mA rows are MIN-only; " +
+                    "Note 3: pulse test)",
+                derivation: "Printed hFE bin 100-300 at IC = 10 mA, VCE = 1.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(100 * 300) = 173.2050808.",
+            },
+        },
+    },
+    {
+        partIds: ["2N3906"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.5150964e-15,
+                basis: "derived",
+                source: "2N3906/datasheets/2n3906.pdf (onsemi 2N3906/D, Feb 2010 Rev. 4) p2, ELECTRICAL " +
+                    "CHARACTERISTICS: 'Base-Emitter Saturation Voltage VBE(sat), IC = 10 mA, IB = 1.0 mA, " +
+                    "MIN 0.65 MAX 0.85 V' magnitudes (PNP; the 50 mA row is MAX-only 0.95 V)",
+                derivation: "Printed VBE(sat) range 0.65-0.85 V at IC = 10 mA, IB = 1.0 mA; arithmetic midpoint " +
+                    "0.75 V (form 2, printed range, no TYP); IS = IC * exp(-Vbe / Vt) with n = 1 " +
+                    "(form 1): 0.01 * exp(-0.75 / 0.025852) = 2.5150964e-15. Polarity is structural " +
+                    "(device PNP flag), not a registry value.",
+            },
+            forwardBeta: {
+                value: 173.2050808,
+                basis: "derived",
+                source: "2N3906/datasheets/2n3906.pdf (onsemi 2N3906/D, Feb 2010 Rev. 4) p2: 'DC Current Gain, " +
+                    "IC = 10 mA, VCE = 1.0 V, MIN 100 MAX 300' (the 0.1/1.0/50/100 mA rows are MIN-only; " +
+                    "Note 2: pulse test)",
+                derivation: "Printed hFE bin 100-300 at IC = 10 mA, VCE = 1.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(100 * 300) = 173.2050808.",
+            },
+        },
+    },
+    {
+        // Saturation current from the onsemi-published datasheet-embedded SPICE model
+        // (Microsim-format NPN line, coordinator clarification 2026-10-19: a model the
+        // manufacturer prints inside its own datasheet is manufacturer-published, basis
+        // `manufacturer-model`). The sheet's only printed Vbe figure is MAX-only VBE(on)
+        // 0.8 V (a limit, not a range or typical), so no form-1 IS exists; BF stays the
+        // derived small-signal-hfe midpoint (mixing sources admitted).
+        partIds: ["2N5088"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 5.911e-15,
+                basis: "manufacturer-model",
+                source: "Manufacturer datasheet onsemi 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General " +
+                    "Purpose Amplifier (2N5088-D; Fairchild-integration printing, opens 'Is Now Part of' " +
+                    "ON Semiconductor), PDF p3 'Spice Model' block, " +
+                    "https://www.onsemi.com/pdf/datasheet/2n5088-d.pdf, verbatim lines:\n" +
+                    "NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2\n" +
+                    "Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p\n" +
+                    "Itf=.35 Vtf=4 Xtf=7 Rb=10)",
+                modelFileUrl: "https://www.onsemi.com/pdf/datasheet/2n5088-d.pdf",
+                modelLine: "NPN (Is=5.911f Xti=3 Eg=1.11 Vaf=62.37 Bf=1.122K Ne=1.394 Ise=5.911f Ikf=14.92m Xtb=1.5 Br=1.271 Nc=2\n" +
+                    "Isc=0 Ikr=0 Rc=1.61 Cjc=4.017p Mjc=.3174 Vjc=.75 Fc=.5 Cje=4.973p Mje=.4146 Vje=.75 Tr=4.673n Tf=821.7p\n" +
+                    "Itf=.35 Vtf=4 Xtf=7 Rb=10)",
+            },
+            forwardBeta: {
+                value: 700,
+                basis: "derived",
+                source: "2N5088/datasheets/2n5088.pdf (onsemi 2N5088/D, Mar 2007 Rev. 4) p3, ELECTRICAL " +
+                    "CHARACTERISTICS (VCE = 5.0 V): 'Small-Signal Current Gain hfe, IC = 1.0 mA, f = 1.0 kHz, " +
+                    "MIN 350 MAX 1400' (the 1.0/10 mA DC rows are MIN-only; the 100 mA 300-900 bin is " +
+                    "high-current; the sole VBE(on) row is MAX-only 0.8 V at IC = 10 mA, VCE = 5.0 V)",
+                derivation: "Printed small-signal hfe bin 350-1400 at IC = 1.0 mA, VCE = 5.0 V, f = 1 kHz; " +
+                    "geometric midpoint (form 2, gains): sqrt(350 * 1400) = 700.",
+            },
+        },
+    },
+    {
+        // No saturationCurrent. The shared onsemi family sheet (2N5088-D) prints exactly one
+        // Spice Model block and it is the 2N5088's (Bf=1.122K); no 2N5088.lib-style file and
+        // no 2N5089-specific model exist on onsemi's site (guessed model URLs fall back to
+        // the docs landing page), and the 2N5089 Bf=1.434K line circulating in third-party
+        // compilations has no verified onsemi-hosted source. Same MAX-only Vbe reason as 2N5088.
+        partIds: ["2N5089"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 900,
+                basis: "derived",
+                source: "2N5088/datasheets/2n5088.pdf (onsemi 2N5088/D, Mar 2007 Rev. 4) p3, ELECTRICAL " +
+                    "CHARACTERISTICS (VCE = 5.0 V), 2N5089 row: 'Small-Signal Current Gain hfe, IC = 1.0 mA, " +
+                    "f = 1.0 kHz, MIN 450 MAX 1800' (DC rows MIN-only; VBE(on) shared MAX-only 0.8 V row)",
+                derivation: "Printed small-signal hfe bin 450-1800 at IC = 1.0 mA, VCE = 5.0 V, f = 1 kHz; " +
+                    "geometric midpoint (form 2, gains): sqrt(450 * 1800) = 900.",
+            },
+        },
+    },
+    {
+        // No saturationCurrent: the sheet's only Vbe figure (VBE(sat) MAX 1.0 V at IC = 100 mA,
+        // IB = 10 mA) is MAX-only with no MIN -- a limit, not a range, so no IS derivation.
+        partIds: ["2SC1815"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 221.3594362,
+                basis: "derived",
+                source: "2SC1815/datasheets/toshiba-2sc1815.pdf (Toshiba 2SC1815, 2007-11-01) p1, ELECTRICAL " +
+                    "CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (1), VCE = 6 V, IC = 2 mA, MIN 70 " +
+                    "MAX 700' (hFE (2) is TYP 100 at IC = 150 mA -- high-current, not the small-signal " +
+                    "region; rank table: O 70-140, Y 120-240, GR 200-400, BL 350-700)",
+                derivation: "Printed hFE (1) bin 70-700 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(70 * 700) = 221.3594362.",
+            },
+        },
+    },
+    {
+        // Y rank of the same Toshiba classification table: a different gain, so its own entry
+        // with the rank's midpoint -- never an alias of the unbinned part.
+        partIds: ["2SC1815-Y"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 169.7056275,
+                basis: "derived",
+                source: "2SC1815/datasheets/toshiba-2sc1815.pdf (Toshiba 2SC1815, 2007-11-01) p1, hFE rank note: " +
+                    "'hFE classification Y: 120-240' (VCE = 6 V, IC = 2 mA per the hFE (1) row)",
+                derivation: "Printed Y-rank hFE bin 120-240; geometric midpoint (form 2, gains): " +
+                    "sqrt(120 * 240) = 169.7056275.",
+            },
+        },
+    },
+    {
+        // BL rank. Both observed spellings fold to one id (2SC1815BL vs 2SC1815-BL); redundant
+        // spellings in one entry are tolerated by the loader, and both name the same rank.
+        partIds: ["2SC1815-BL", "2SC1815BL"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 494.9747468,
+                basis: "derived",
+                source: "2SC1815/datasheets/toshiba-2sc1815.pdf (Toshiba 2SC1815, 2007-11-01) p1, hFE rank note: " +
+                    "'hFE classification BL: 350-700' (VCE = 6 V, IC = 2 mA per the hFE (1) row)",
+                derivation: "Printed BL-rank hFE bin 350-700; geometric midpoint (form 2, gains): " +
+                    "sqrt(350 * 700) = 494.9747468.",
+            },
+        },
+    },
+    {
+        partIds: ["MPSA18"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 8.3261401e-14,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi MPSA18/D, Apr 2007 Rev. 4, p3, ON " +
+                    "CHARACTERISTICS: 'Base-Emitter On Voltage VBE(on), IC = 1.0 mA, VCE = 5.0 V, TYP 0.6 " +
+                    "MAX 0.7 V' (Note 2: pulse test)",
+                derivation: "Printed VBE(on) TYP 0.6 V at IC = 1.0 mA, VCE = 5.0 V; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.001 * exp(-0.6 / 0.025852) = 8.3261401e-14.",
+            },
+            forwardBeta: {
+                value: 1100,
+                basis: "datasheet",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi MPSA18/D, Apr 2007 Rev. 4, p3: " +
+                    "'DC Current Gain hFE, IC = 1.0 mA, VCE = 5.0 V, MIN 500 TYP 1100' (the 10 mA 500-1500 " +
+                    "bin is higher-current; the 1 mA TYP is the small-signal figure)",
+                derivation: "Printed hFE TYP 1100 at IC = 1.0 mA, VCE = 5.0 V, transcribed (no midpoint: a TYP " +
+                    "is already one value).",
+            },
+        },
+    },
+    {
+        // Gain AND saturation current. The printed-Vbe derivation is deliberately NOT used:
+        // the only printed Vbe point is a forced-beta saturation figure at IC = 150 mA
+        // (VBE(sat) 0.6-1.2 V), where series resistance dominates (form 1 takes an
+        // ACTIVE-REGION Vbe at IC <= 20 mA only, owner ruling 2026-10-19). IS below is the
+        // onsemi-published PSpice model's IS, preferred over any derived value by the same
+        // ruling. Mixing sources across parameters of one part is admitted (coordinator
+        // 2026-10-19): BF stays the derived small-signal-hfe midpoint.
+        partIds: ["2N2222A"],
+        class: "bjt",
+        note: "The model's BF 929.846 is a MODPEX fit, unusually high, and is NOT adopted (BF stays " +
+            "the derived 122.47); its NF 1.10496 has no schema field (the engine's bjt law carries no " +
+            "emission coefficient, n = 1 by construction), so IS is taken as printed with that caveat.",
+        params: {
+            saturationCurrent: {
+                value: 3.88184e-14,
+                basis: "manufacturer-model",
+                source: "Manufacturer model file https://www.onsemi.com/download/models/txt/2n2222a.lib.txt " +
+                    "(onsemi 2N2222A PSpice, MODPEX-generated, model generated on Feb 28, 13), card lines:\n" +
+                    ".MODEL Q2n2222a npn\n+IS=3.88184e-14 BF=929.846 NF=1.10496 VAF=16.5003",
+                modelFileUrl: "https://www.onsemi.com/download/models/txt/2n2222a.lib.txt",
+                modelLine: ".MODEL Q2n2222a npn\n+IS=3.88184e-14 BF=929.846 NF=1.10496 VAF=16.5003",
+            },
+            forwardBeta: {
+                // The DC hFE rows at small-signal currents are MIN-only; the only full DC range is
+                // at 150 mA (high-current falloff). The small-signal hfe bin at 1 mA, f = 1 kHz
+                // (far below fT 300 MHz, so approx. the DC beta) is the region-correct figure.
+                value: 122.4744871,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi P2N2222A/D, Jan 2013 Rev. 7, p2, " +
+                    "SMALL-SIGNAL CHARACTERISTICS: 'Small-Signal Current Gain hfe, IC = 1.0 mA, " +
+                    "VCE = 10 V, f = 1.0 kHz, MIN 50 MAX 300' (DC hFE rows at 0.1/1.0/10 mA are MIN-only; " +
+                    "the 150 mA 100-300 range is high-current)",
+                derivation: "Printed small-signal hfe bin 50-300 at IC = 1.0 mA, VCE = 10 V, f = 1 kHz; " +
+                    "geometric midpoint (form 2, gains): sqrt(50 * 300) = 122.4744871.",
+            },
+        },
+    },
+    {
+        partIds: ["BC549C"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
+                    "sheet BC546/547/548/549/550), p2, ELECTRICAL CHARACTERISTICS: 'Base-Emitter On Voltage " +
+                    "VBE(on), VCE = 5 V, IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row for the family, no " +
+                    "per-part split)",
+                derivation: "Printed VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) with " +
+                    "n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 579.6550698,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, p2, hFE " +
+                    "CLASSIFICATION table: 'C: 420 ~ 800' (the family hFE row is MIN 110 MAX 800 at VCE = 5 V, " +
+                    "IC = 2 mA; the C bin is the bin this part is)",
+                derivation: "Printed C-bin hFE 420-800; geometric midpoint (form 2, gains): " +
+                    "sqrt(420 * 800) = 579.6550698.",
+            },
+        },
+    },
+    {
+        // Wave 3. Farnell/Multicomp BC107-108-109 family sheet (V1.0 30/05/05) p3: one
+        // VBE(on) row for the family (no per-part split, no TYP), so IS is shared with
+        // BC109 below. DC hFE bins are per part at the same bias, so BF differs.
+        partIds: ["BC108"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 6.3312899e-14,
+                basis: "derived",
+                source: "BC109/datasheets/farnell-bc107-bc108-bc109.pdf (Multicomp BC107/BC108/BC109, V1.0 " +
+                    "30/05/05) p3, ELECTRICAL CHARACTERISTICS: 'Base Emitter on Voltage VBE(on), " +
+                    "IC = 2 mA, VCE = 5 V, MIN 0.55 MAX 0.70 V' (no TYP; one row for the family, " +
+                    "no per-part split; the VBE(sat) rows are MAX-only 0.83 V at 10 mA and 1.05 V " +
+                    "at 100 mA and yield nothing)",
+                derivation: "Printed VBE(on) range 0.55-0.70 V at IC = 2 mA, VCE = 5 V; arithmetic " +
+                    "midpoint 0.625 V (form 2, printed range, no TYP); IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.625 / 0.025852) = 6.3312899e-14.",
+            },
+            forwardBeta: {
+                value: 296.6479395,
+                basis: "derived",
+                source: "BC109/datasheets/farnell-bc107-bc108-bc109.pdf (Multicomp BC107/BC108/BC109, V1.0 " +
+                    "30/05/05) p3: 'DC Current Gain hFE, IC = 2 mA, VCE = 5 V: BC108 MIN 110 MAX 800' " +
+                    "(BC107 110-450 and BC109 200-800 are the sibling rows; the small-signal hfe " +
+                    "row at f = 1 kHz reads BC108 125-900 and is not used -- the DC bin at the " +
+                    "same bias is the quantity the law wants, per the 2N3904/2SC1815 precedent)",
+                derivation: "Printed BC108 DC hFE bin 110-800 at IC = 2 mA, VCE = 5 V; geometric " +
+                    "midpoint (form 2, gains): sqrt(110 * 800) = 296.6479395.",
+            },
+        },
+    },
+    {
+        // Wave 3. Same family VBE(on) row as BC108 (shared IS); own DC hFE bin.
+        partIds: ["BC109"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 6.3312899e-14,
+                basis: "derived",
+                source: "BC109/datasheets/farnell-bc107-bc108-bc109.pdf (Multicomp BC107/BC108/BC109, V1.0 " +
+                    "30/05/05) p3, ELECTRICAL CHARACTERISTICS: 'Base Emitter on Voltage VBE(on), " +
+                    "IC = 2 mA, VCE = 5 V, MIN 0.55 MAX 0.70 V' (no TYP; one row for the family, " +
+                    "no per-part split; the VBE(sat) rows are MAX-only and yield nothing)",
+                derivation: "Printed VBE(on) range 0.55-0.70 V at IC = 2 mA, VCE = 5 V; arithmetic " +
+                    "midpoint 0.625 V (form 2, printed range, no TYP); IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.625 / 0.025852) = 6.3312899e-14.",
+            },
+            forwardBeta: {
+                value: 400,
+                basis: "derived",
+                source: "BC109/datasheets/farnell-bc107-bc108-bc109.pdf (Multicomp BC107/BC108/BC109, V1.0 " +
+                    "30/05/05) p3: 'DC Current Gain hFE, IC = 2 mA, VCE = 5 V: BC109 MIN 200 MAX 800' " +
+                    "(the small-signal hfe row at f = 1 kHz reads BC109 240-900 and is not used, " +
+                    "same reason as BC108)",
+                derivation: "Printed BC109 DC hFE bin 200-800 at IC = 2 mA, VCE = 5 V; geometric " +
+                    "midpoint (form 2, gains): sqrt(200 * 800) = 400.",
+            },
+        },
+    },
+    {
+        // Wave 3. Same onsemi BC550/D family sheet as BC549C (one VBE(on) row, C bin).
+        partIds: ["BC550C"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
+                    "sheet BC546/547/548/549/550), p2, ELECTRICAL CHARACTERISTICS: 'Base-Emitter On " +
+                    "Voltage VBE(on), VCE = 5 V, IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row " +
+                    "for the family, no per-part split)",
+                derivation: "Printed VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 579.6550698,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
+                    "CLASSIFICATION table: 'C: 420 ~ 800' (the family hFE row is MIN 110 MAX 800 " +
+                    "at VCE = 5 V, IC = 2 mA; the C bin is the bin this part is)",
+                derivation: "Printed C-bin hFE 420-800; geometric midpoint (form 2, gains): " +
+                    "sqrt(420 * 800) = 579.6550698.",
+            },
+        },
+    },
+    {
+        // Wave 3. Same family VBE(on) row (shared IS); B bin.
+        partIds: ["BC549B"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
+                    "sheet BC546/547/548/549/550), p2: 'Base-Emitter On Voltage VBE(on), VCE = 5 V, " +
+                    "IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row for the family)",
+                derivation: "Printed VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 300,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
+                    "CLASSIFICATION table: 'B: 200 ~ 450'",
+                derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 450) = 300.",
+            },
+        },
+    },
+    {
+        // Wave 3. Same family VBE(on) row (shared IS); B bin (same bin as BC549B: the
+        // classification table is by letter, not by part number).
+        partIds: ["BC547B"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
+                    "sheet BC546/547/548/549/550), p2: 'Base-Emitter On Voltage VBE(on), VCE = 5 V, " +
+                    "IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row for the family)",
+                derivation: "Printed VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 300,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
+                    "CLASSIFICATION table: 'B: 200 ~ 450' (by bin letter)",
+                derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 450) = 300.",
+            },
+        },
+    },
+    {
+        // Wave 3. Unsuffixed BC550: the family VBE(on) row (shared IS) but no bin of its
+        // own, so BF is the family DC row's midpoint (the unbinned 2SC1815 precedent).
+        partIds: ["BC550"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
+                    "sheet BC546/547/548/549/550), p2: 'Base-Emitter On Voltage VBE(on), VCE = 5 V, " +
+                    "IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row for the family)",
+                derivation: "Printed VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 296.6479395,
+                basis: "derived",
+                source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, " +
+                    "family hFE row: MIN 110 MAX 800 at VCE = 5 V, IC = 2 mA (no bin for the " +
+                    "unsuffixed label)",
+                derivation: "Printed family hFE 110-800; geometric midpoint (form 2, gains): " +
+                    "sqrt(110 * 800) = 296.6479395.",
+            },
+        },
+    },
+    {
+        // Wave 3. 2N3903: the family sheet's only Vbe basis is the VBE(sat) row shared
+        // with 2N3904 (IC = 10 mA, within the IC <= 20 mA gate; identical row, conditions
+        // and arithmetic to the shipped 2N3904 IS, which stands). BF is the 2N3903 DC
+        // row at the same bias (sibling-consistent with 2N3904's DC bin, not the
+        // small-signal hfe row).
+        partIds: ["2N3903"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.5150964e-15,
+                basis: "derived",
+                source: "2N3903/datasheets/2n3903.pdf (onsemi 2N3903/D, Aug 2021 Rev. 9, family sheet " +
+                    "2N3903 + 2N3904) p2, ELECTRICAL CHARACTERISTICS: 'Base-Emitter Saturation " +
+                    "Voltage VBE(sat), IC = 10 mA, IB = 1.0 mA, MIN 0.65 MAX 0.85 V' (shared row, " +
+                    "no per-part split; the 50 mA row is MAX-only 0.95 V)",
+                derivation: "Printed VBE(sat) range 0.65-0.85 V at IC = 10 mA, IB = 1.0 mA (IC within the " +
+                    "form-1 IC <= 20 mA gate); arithmetic midpoint 0.75 V (form 2); " +
+                    "IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.01 * exp(-0.75 / 0.025852) = 2.5150964e-15 -- same row and arithmetic " +
+                    "as the shipped 2N3904 IS.",
+            },
+            forwardBeta: {
+                value: 86.6025404,
+                basis: "derived",
+                source: "2N3903/datasheets/2n3903.pdf (onsemi 2N3903/D, Aug 2021 Rev. 9) p2, ON " +
+                    "CHARACTERISTICS: 'DC Current Gain hFE, IC = 10 mA, VCE = 1.0 V: 2N3903 " +
+                    "MIN 50 MAX 150' (2N3904 100-300 is the sibling row; the small-signal hfe " +
+                    "row at 1 mA reads 2N3903 50-200 and is not used -- the DC bin at the same " +
+                    "bias as 2N3904 is the sibling-consistent quantity)",
+                derivation: "Printed 2N3903 DC hFE bin 50-150 at IC = 10 mA, VCE = 1.0 V; geometric " +
+                    "midpoint (form 2, gains): sqrt(50 * 150) = 86.6025404.",
+            },
+        },
+    },
+    {
+        // Wave 3. Toshiba 2SC732TM rank entry (the 2SC1815-Y/BL precedent: a rank is a
+        // different gain, so its own entry, never an alias). VBE TYP transcribed (active
+        // region, IC = 2 mA); BF is the GR rank's midpoint.
+        partIds: ["2SC732TM-GR"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, scan p1, " +
+                    "read visually, no text layer) ELECTRICAL CHARACTERISTICS (Ta = 25C): " +
+                    "'Base-Emitter Voltage VBE, VCE = 6 V, IC = 2 mA: TYP 0.65 V' (no MIN/MAX; " +
+                    "the VCE(sat) row is MAX-only 0.3 V at IC = 10 mA and yields nothing)",
+                derivation: "Printed VBE TYP 0.65 V at VCE = 6 V, IC = 2 mA (active region, within the " +
+                    "form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.65 / 0.025852) = 2.4071917e-14.",
+            },
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, scan p1) " +
+                    "ELECTRICAL CHARACTERISTICS: 'DC Current Gain hFE (Note), VCE = 6 V, IC = 2 mA: " +
+                    "MIN 200 MAX 700' with Note 'hFE Classification GR: 200~400, BL: 350~600'",
+                derivation: "Printed GR-rank hFE bin 200-400 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 400) = 282.8427125.",
+            },
+        },
+    },
+    {
+        // Wave 3. NEC 2SC945 rank entry (same rank-entry precedent). VBE TYP transcribed
+        // (active region, IC = 1 mA); BF is the P rank's midpoint.
+        partIds: ["2SC945-P"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 3.8411256e-14,
+                basis: "derived",
+                source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258, scan, read " +
+                    "visually, no text layer) ELECTRICAL CHARACTERISTICS (Ta = 25C): 'VBE Base to " +
+                    "Emitter Voltage, MIN 0.55 TYP 0.62 MAX 0.65 V at VCE = 6.0 V, IC = 1.0 mA' " +
+                    "(the VBE(sat) row is TYP 0.86 MAX 1.0 V at IC = 100 mA -- high-current, excluded)",
+                derivation: "Printed VBE TYP 0.62 V at VCE = 6.0 V, IC = 1.0 mA (active region, within " +
+                    "the form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.001 * exp(-0.62 / 0.025852) = 3.8411256e-14.",
+            },
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258) ELECTRICAL " +
+                    "CHARACTERISTICS: 'hFE2 DC Current Gain, MIN 90 TYP 200 MAX 600 at VCE = 6.0 V, " +
+                    "IC = 1.0 mA' with 'Classification of hFE2: R 90-180, Q 135-270, P 200-400, " +
+                    "K 300-600; hFE2 Test Conditions: VCE = 6.0 V, IC = 1.0 mA'",
+                derivation: "Printed P-rank hFE2 bin 200-400 at VCE = 6.0 V, IC = 1.0 mA; geometric " +
+                    "midpoint (form 2, gains): sqrt(200 * 400) = 282.8427125.",
+            },
+        },
+    },
+    {
+        // Unbinned 2SC945: the family hFE2 row prints a TYP, so no midpoint is needed.
+        partIds: ["2SC945"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 3.8411256e-14,
+                basis: "derived",
+                source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258, scan, read " +
+                    "visually, no text layer) ELECTRICAL CHARACTERISTICS (Ta = 25C): 'VBE Base to " +
+                    "Emitter Voltage, MIN 0.55 TYP 0.62 MAX 0.65 V at VCE = 6.0 V, IC = 1.0 mA'",
+                derivation: "Printed VBE TYP 0.62 V at VCE = 6.0 V, IC = 1.0 mA (active region, within " +
+                    "the form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.001 * exp(-0.62 / 0.025852) = 3.8411256e-14.",
+            },
+            forwardBeta: {
+                value: 200,
+                basis: "datasheet",
+                source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258) ELECTRICAL " +
+                    "CHARACTERISTICS: 'hFE2 DC Current Gain, MIN 90 TYP 200 MAX 600 at VCE = 6.0 V, " +
+                    "IC = 1.0 mA' (the hFE1 row at 0.1 mA is not the law's bias; the rank table " +
+                    "splits R/Q/P/K, which stay separate entries)",
+            },
+        },
+    },
+    {
+        // Wave 4. No VBE row of any kind: the table prints ICBO/IEBO, hFE (no TYP),
+        // VCE(sat) MAX-only and no VBE(on)/VBE(sat) TYP or range, so IS has no input.
+        partIds: ["2SC2458"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 221.3594362,
+                basis: "derived",
+                source: "2SC2458/datasheets/toshiba-2sc2458.pdf (Toshiba 2SC2458(L), 1996-09-02, scan, " +
+                    "read visually, no text layer) p1, ELECTRICAL CHARACTERISTICS (Ta = 25C): 'DC " +
+                    "Current Gain hFE (Note), VCE = 6 V, IC = 2 mA, MIN 70 MAX 700' with 'Note: hFE " +
+                    "Classification O: 70~140, Y: 120~240, GR: 200~400, BL: 350~700'",
+                derivation: "Printed hFE bin 70-700 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(70 * 700) = 221.3594362.",
+            },
+        },
+    },
+    {
+        partIds: ["2SC2458GR", "2SC2458-GR"],
+        class: "bjt",
+        note: "The hyphenated and unhyphenated spellings fold to one id (2sc2458gr); both are " +
+            "corpus-observed (boss-tr-2 uses 2SC2458GR, boss-ge-7 uses 2SC2458-GR).",
+        params: {
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "2SC2458/datasheets/toshiba-2sc2458.pdf (Toshiba 2SC2458(L), 1996-09-02, scan) p1, " +
+                    "'Note: hFE Classification GR: 200~400' (VCE = 6 V, IC = 2 mA per the table row)",
+                derivation: "Printed GR-rank hFE bin 200-400; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 400) = 282.8427125.",
+            },
+        },
+    },
+    {
+        // Wave 4. Toshiba mini-package selection table (single-page scan T-27-01 via a
+        // third-party host; original Toshiba publication). The hFE cell for the 2SC3378
+        // column reads 200~700 at VCE = 6 V, IC = 2 mA; the column map is anchored three
+        // ways (the 2SC2458(L) column reads VCEO 50, hFE 70~700 at VCE = 6 V, IC = 2 mA,
+        // all matching its verified datasheet). No VBE row exists anywhere in the table,
+        // so IS has no input. The GR rank the corpus uses (2SC3378GR) has no citable row:
+        // the rank footnotes cannot be mapped to this column, so those devices stay on
+        // class defaults and are reported, not filled.
+        partIds: ["2SC3378"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 374.1657387,
+                basis: "derived",
+                source: "Toshiba MINI PACKAGE SERIES selection table (67C 09139 D T-27-01, third-party " +
+                    "scan) 'MINI PACKAGE SERIES' table, 2SC3378 column, read visually at high " +
+                    "magnification: 'hFE, VCE = 6 V, IC = 2 mA, 200~700' (no MIN/MAX/TYP split, no " +
+                    "VBE row in the table)",
+                derivation: "Printed hFE range 200-700 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 700) = 374.1657387.",
+            },
+        },
+    },
+    {
+        partIds: ["2SC732TM-BL"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, scan, read " +
+                    "visually, no text layer) p1, ELECTRICAL CHARACTERISTICS (Ta = 25C): 'Base-Emitter " +
+                    "Voltage VBE, VCE = 6 V, IC = 2 mA, TYP 0.65 V' (shared row, GR precedent wave 3)",
+                derivation: "Printed VBE TYP 0.65 V at VCE = 6 V, IC = 2 mA (active region, within the " +
+                    "form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.65 / 0.025852) = 2.4071917e-14.",
+            },
+            forwardBeta: {
+                value: 458.2575695,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, scan) p1, " +
+                    "'Note: hFE Classification GR: 200~400, BL: 350~600' (VCE = 6 V, IC = 2 mA per " +
+                    "the table row; only these two ranks exist in this sheet)",
+                derivation: "Printed BL-rank hFE bin 350-600; geometric midpoint (form 2, gains): " +
+                    "sqrt(350 * 600) = 458.2575695.",
+            },
+        },
+    },
+    {
+        // Wave 4. VBE(on) is MAX-only (0.77 V at 10 mA), a limit, not a range: no IS.
+        partIds: ["BC109C"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 520,
+                basis: "datasheet",
+                source: "BC109C/datasheets/farnell-bc109c.pdf (Farnell/Multicomp BC109 Series V1.0 " +
+                    "08/04/06) p2, Electrical Characteristics (Ta = 25C), C Group: 'DC Current hFE, " +
+                    "IC = 2 mA, VCE = 5 V, MIN 420 MAX 800'; and the original Philips BC107/108/109 " +
+                    "Product Specification 1997 Sep 03 (M3D125, order 9397 750 02817) p4, same row " +
+                    "and conditions with a TYP column: 'BC108C/BC109C MIN 420 TYP 520 MAX 800'",
+            },
+        },
+    },
+    {
+        // Wave 4. The onsemi BC237/D family sheet names BC237, BC237B, BC237C and BC239C
+        // only: bare BC239 has DC hFE rows nowhere in it (fT/NF/VCEO rows only), so bare
+        // BC239 is excluded (see the wave-4 report); BC239C carries the C-bin row.
+        partIds: ["BC239C"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 7.6822511e-14,
+                basis: "derived",
+                source: "BC239C/datasheets/onsemi-bc237-d.pdf (onsemi BC237/D, Rev. 4 Jan 2006) p2, ON " +
+                    "CHARACTERISTICS: 'Base-Emitter On Voltage VBE(on), IC = 2.0 mA, VCE = 5.0 V, " +
+                    "MIN 0.55 TYP 0.62 MAX 0.7 V' (ungraded family row; C-bin table below it)",
+                derivation: "Printed VBE(on) TYP 0.62 V at IC = 2.0 mA, VCE = 5.0 V (active region, within " +
+                    "the form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.62 / 0.025852) = 7.6822511e-14.",
+            },
+            forwardBeta: {
+                value: 500,
+                basis: "datasheet",
+                source: "BC239C/datasheets/onsemi-bc237-d.pdf (onsemi BC237/D, Rev. 4 Jan 2006) p2: 'DC " +
+                    "Current Gain hFE, IC = 2.0 mA, VCE = 5.0 V, BC237C/239C MIN 380 TYP 500 MAX 800'",
+            },
+        },
+    },
+    {
+        // Wave 4. Philips original (M3D125) prints TYP hFE for the B bin and a TYP VBE for
+        // the family; the Farnell/Multicomp reprint of the same family prints MIN/MAX only.
+        partIds: ["BC107B"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 7.6822511e-14,
+                basis: "derived",
+                source: "Philips Semiconductors BC107/108/109 Product Specification 1997 Sep 03 (M3D125, " +
+                    "order 9397 750 02817; original-manufacturer sheet via third-party host) p4, " +
+                    "CHARACTERISTICS (Tj = 25C): 'VBE base-emitter voltage, IC = 2 mA, VCE = 5 V, " +
+                    "note 2, MIN 550 TYP 620 MAX 700 mV' (ungraded family row)",
+                derivation: "Printed VBE TYP 0.62 V at IC = 2 mA, VCE = 5 V (active region, within the " +
+                    "form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.62 / 0.025852) = 7.6822511e-14.",
+            },
+            forwardBeta: {
+                value: 290,
+                basis: "datasheet",
+                source: "Philips Semiconductors BC107/108/109 Product Specification 1997 Sep 03 (M3D125) " +
+                    "p4: 'hFE DC current gain, IC = 2 mA, VCE = 5 V: BC107B/BC108B/BC109B MIN 200 " +
+                    "TYP 290 MAX 450'",
+            },
+        },
+    },
+    {
+        // Wave 4. NJ Semi-Conductors TO-106 sheet: VBE(on) is MAX-only (0.75 V at 100 uA),
+        // a limit, not a range: no IS. The small-signal hfe 50-1100 row is the 1 kHz
+        // figure, not the law's DC quantity.
+        partIds: ["2N5133"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 220,
+                basis: "datasheet",
+                source: "2N5133/datasheets/njsemi-2n5133.pdf (NJ Semi-Conductors 2N5133, Fairchild-process " +
+                    "TO-106) p1, ELECTRICAL CHARACTERISTICS (25C free air): 'DC Current Gain hFE, " +
+                    "IC = 1.0 mA, VCE = 5.0 V, MIN 60 TYP 220 MAX 1000'",
+            },
+        },
+    },
+    {
+        // Wave 4. Fairchild 1997 sheet: hFE bins 50-150 at 2 mA and 25 MIN at 50 mA, no TYP
+        // column; VBE(sat) is MAX-only (0.95 V at 50 mA), high-current saturation: no IS.
+        partIds: ["2N4125"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 86.6025404,
+                basis: "derived",
+                source: "2N4125/datasheets/2n4125.pdf (Fairchild Semiconductor 2N4125, 1997, PNP General " +
+                    "Purpose Amplifier) p2, Electrical Characteristics (TA = 25C): 'hFE DC Current " +
+                    "Gain, VCE = 1.0 V, IC = 2.0 mA, MIN 50 MAX 150' (the 50 mA row is MIN-only 25; " +
+                    "pulse test; the small-signal hfe 50-200 row at 1 kHz is not DC hFE)",
+                derivation: "Printed hFE bin 50-150 at VCE = 1.0 V, IC = 2.0 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 150) = 86.6025404.",
+            },
+        },
+    },
+    {
+        // Wave 4. Central 2N4123-2N4126 R1: the hFE row prints MIN/MAX only (no TYP);
+        // VBE(SAT) is MAX-only (0.95 V at 50 mA): no IS. 2N4126 is the PNP column (the
+        // header prints 2N4123/4124 NPN and 2N4125/4126 PNP); polarity is structural.
+        partIds: ["2N4126"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 207.8460969,
+                basis: "derived",
+                source: "Central Semiconductor 2N4123-2N4126 R1 (12-Jan-2016, my.centralsemi.com) p1, " +
+                    "ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 1.0 V, IC = 2.0 mA, 2N4126 " +
+                    "MIN 120 MAX 360' (the 50 mA row is MIN-only 60; small-signal hfe at 1 kHz not used)",
+                derivation: "Printed hFE bin 120-360 at VCE = 1.0 V, IC = 2.0 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(120 * 360) = 207.8460969.",
+            },
+        },
+    },
+    {
+        // Wave 4. NEC 2SA733 D10868EJ7V0DS00 (7th ed, March 2004): the hFE row prints a TYP
+        // for the family; the rank table splits R/Q/P/E. Unbinned plus the corpus-used P
+        // rank (boss-vb-2 Q10 '2SA733-P'); R/Q/E stay out (no corpus use, same sheet).
+        partIds: ["2SA733"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 3.8411256e-14,
+                basis: "derived",
+                source: "NEC 2SA733 DATA SHEET Doc. No. D10868EJ7V0DS00 (7th edition, March 2004, via " +
+                    "renesas.com) p1, ELECTRICAL CHARACTERISTICS (TA = 25C): 'Base to Emitter Voltage " +
+                    "VBE, VCE = -6.0 V, IC = -1.0 mA, MIN -0.58 TYP -0.62 MAX -0.68 V' magnitudes (PNP)",
+                derivation: "Printed VBE TYP 0.62 V at IC = 1.0 mA (active region, within the form-1 IC <= " +
+                    "20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.001 * exp(-0.62 / 0.025852) = 3.8411256e-14. Polarity is structural.",
+            },
+            forwardBeta: {
+                value: 200,
+                basis: "datasheet",
+                source: "NEC 2SA733 DATA SHEET D10868EJ7V0DS00 (7th ed, March 2004) p1: 'DC Current Gain " +
+                    "hFE, VCE = -6.0 V, IC = -1.0 mA, MIN 90 TYP 200 MAX 600' (the hFE(2) row at " +
+                    "-150 mA is high-current falloff; ranks R/Q/P/E split below)",
+            },
+        },
+    },
+    {
+        partIds: ["2SA733-P", "2SA733P"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 3.8411256e-14,
+                basis: "derived",
+                source: "NEC 2SA733 DATA SHEET D10868EJ7V0DS00 (7th ed, March 2004) p1: shared VBE row " +
+                    "'MIN -0.58 TYP -0.62 MAX -0.68 V at VCE = -6.0 V, IC = -1.0 mA' magnitudes (PNP; " +
+                    "the two spellings fold to one id, 2SC945-P precedent)",
+                derivation: "Printed VBE TYP 0.62 V at IC = 1.0 mA (form-1 gate met); IS = " +
+                    "0.001 * exp(-0.62 / 0.025852) = 3.8411256e-14.",
+            },
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "NEC 2SA733 DATA SHEET D10868EJ7V0DS00 (7th ed, March 2004) p1, 'CLASSIFICATION " +
+                    "OF hFE, Rank P, Range 200 to 400 (hFE Test Conditions: VCE = -6.0 V, IC = -1.0 mA)'",
+                derivation: "Printed P-rank hFE bin 200-400; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 400) = 282.8427125.",
+            },
+        },
+    },
+    {
+        // Wave 4. Panasonic 2SC828/2SC828A databook p293 (third-party scan of the original
+        // page; doc identity disclosed: footer 'Panasonic', undated). The DC hFE row prints
+        // MIN/MAX only (no TYP); VBE is MAX-only (0.8 V at 10 mA), a limit: no IS.
+        // Ranks Q/R/S are printed but unused by the corpus, so only the unbinned row ships.
+        partIds: ["2SC828"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 260,
+                basis: "derived",
+                source: "Panasonic 2SC828/2SC828A databook p293 (original-manufacturer page via " +
+                    "third-party host) ELECTRICAL CHARACTERISTICS (Ta = 25C): 'DC Current Gain hFE*, " +
+                    "VCE = 5 V, IC = 2 mA, min. 130, max. 520' with '*hFE Ranking Rank Q 130~260, " +
+                    "R 180~360, S 260~520'",
+                derivation: "Printed hFE range 130-520 at VCE = 5 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(130 * 520) = 260.0.",
+            },
+        },
+    },
+    {
+        // Wave 4. Toshiba 2SA1015(L) scan (1997-04-10 / 2003-03-27 reprint, same table;
+        // third-party host of the Toshiba original). No active-VBE row (only VBE(sat) MAX
+        // -1.1 V at -100 mA): IS excluded. Bare A1015 is a top-mark abbreviation no sheet
+        // prints: excluded. Unbinned plus the corpus-used Y rank (2SA1015-Y); O/GR stay
+        // out (same sheet, no corpus use).
+        partIds: ["2SA1015"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 167.3320053,
+                basis: "derived",
+                source: "Toshiba 2SA1015(L) Transistor Silicon PNP Epitaxial Type (PCT process), " +
+                    "2003-03-27 reprint of the 1997-04-10 original (third-party host) p1, ELECTRICAL " +
+                    "CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (1) (Note), VCE = -6 V, " +
+                    "IC = -2 mA, 70 MIN, 400 MAX' with 'Note: hFE (1) classification O: 70~140, " +
+                    "Y: 120~240, GR: 200~400'",
+                derivation: "Printed hFE(1) range 70-400 at VCE = -6 V, IC = -2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(70 * 400) = 167.3320053.",
+            },
+        },
+    },
+    {
+        partIds: ["2SA1015-Y", "2SA1015Y"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 169.7056275,
+                basis: "derived",
+                source: "Toshiba 2SA1015(L) 2003-03-27 p1, 'Note: hFE (1) classification Y: 120~240' " +
+                    "(VCE = -6 V, IC = -2 mA per the table row; the two spellings fold to one id)",
+                derivation: "Printed Y-rank hFE(1) bin 120-240; geometric midpoint (form 2, gains): " +
+                    "sqrt(120 * 240) = 169.7056275.",
+            },
+        },
+    },
+    {
+        // Wave 4. Toshiba 2SC2240 2007-11-01: the VBE row prints a TYP (active region), so
+        // IS derives; ranks GR/BL split the gain. Unbinned plus the corpus-used GR rank
+        // (six GR uses); BL stays out (same sheet, no corpus use).
+        partIds: ["2SC2240"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "2SC2240/datasheets/toshiba-2sc2240.pdf (Toshiba 2SC2240, 2007-11-01) p2, " +
+                    "ELECTRICAL CHARACTERISTICS (Ta = 25C): 'Base-emitter voltage VBE, VCE = 6 V, " +
+                    "IC = 2 mA, TYP 0.65 V'",
+                derivation: "Printed VBE TYP 0.65 V at VCE = 6 V, IC = 2 mA (active region, within the " +
+                    "form-1 IC <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.65 / 0.025852) = 2.4071917e-14.",
+            },
+            forwardBeta: {
+                value: 374.1657387,
+                basis: "derived",
+                source: "2SC2240/datasheets/toshiba-2sc2240.pdf (Toshiba 2SC2240, 2007-11-01) p2: 'DC " +
+                    "current gain hFE (Note), VCE = 6 V, IC = 2 mA, MIN 200 MAX 700' with 'Note: hFE " +
+                    "classification GR: 200~400, BL: 350~700'",
+                derivation: "Printed hFE range 200-700 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 700) = 374.1657387.",
+            },
+        },
+    },
+    {
+        partIds: ["2SC2240-GR", "2SC2240GR"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "2SC2240/datasheets/toshiba-2sc2240.pdf (Toshiba 2SC2240, 2007-11-01) p2, shared " +
+                    "VBE row 'TYP 0.65 V at VCE = 6 V, IC = 2 mA' (the two spellings fold to one id)",
+                derivation: "Printed VBE TYP 0.65 V at IC = 2 mA (form-1 gate met); IS = " +
+                    "0.002 * exp(-0.65 / 0.025852) = 2.4071917e-14.",
+            },
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "2SC2240/datasheets/toshiba-2sc2240.pdf (Toshiba 2SC2240, 2007-11-01) p2, 'Note: " +
+                    "hFE classification GR: 200~400' (VCE = 6 V, IC = 2 mA per the table row)",
+                derivation: "Printed GR-rank hFE bin 200-400; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 400) = 282.8427125.",
+            },
+        },
+    },
+    {
+        // Wave 4 community. Germanium PNP: Jim Hagerman's published AC128 SPICE model
+        // (paper + card). Provisional single sample: germanium varies enormously specimen
+        // to specimen, and the Holmes/Whitehead DAFx-2017 extraction of their own AC128
+        // specimen reads IS = 20.66u, BF = 229.6 (same order of IS, hotter gain) --
+        // disclosed as the corroborating one-sample. Polarity is structural (PNP).
+        partIds: ["AC128"],
+        class: "bjt",
+        note: "Corroborating single-specimen extraction (Holmes/Holters/van Walstijn DAFx-2017 " +
+            "Table 1 via https://grwhitehead.github.io/germaniumbjts, Greg Whitehead): " +
+            ".MODEL AC128 PNP(IS=20.66u BF=229.6 BR=14.66 ...) -- a hot specimen; germanium " +
+            "varies enormously, so every community germanium value is one sample.",
+        params: {
+            saturationCurrent: {
+                value: 17e-6,
+                basis: "community",
+                source: "Jim Hagerman, 'AC128 Ge PNP Transistor SPICE Model' paper, 01/16/20, " +
+                    "http://www.hagtech.com/pdf/ac128model.pdf (PDF, 4 pp, read 2026-10-19): " +
+                    "'For saturation current we take Vbe and Ic values at low current. From the " +
+                    "graph we get 150mV and 6mA' (6 mA * exp(-0.150/0.025852) = 18.1 uA ~= 17u); " +
+                    "verbatim model card:\n" +
+                    ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
+                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
+                sourceKind: "published-spice-model",
+                url: "http://www.hagtech.com/pdf/ac128model.pdf",
+                quote: ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
+                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
+                author: "Jim Hagerman",
+                retrievedDate: "2026-10-19",
+                whyNoBetterSource: "Searched Mullard Data Book 1965-66/1974-75 excerpts (short-form only: Ptot, " +
+                    "VCE, ICM and small-signal hfe, no Vbe/DC-hFE), the Valvo Datenbuch 1969-70 " +
+                    "reprint (URL now 404), alldatasheet/GPD/NJSEMI AC128 sheets (non-original " +
+                    "manufacturers and/or 1-4 pp short-form). No original-manufacturer AC128 sheet " +
+                    "with active-region Vbe + DC hFE bin is readable online. The Holmes/Whitehead " +
+                    "specimen corroborates the IS order.",
+            },
+            forwardBeta: {
+                value: 90,
+                basis: "community",
+                source: "Jim Hagerman, 'AC128 Ge PNP Transistor SPICE Model' paper, 01/16/20, " +
+                    "http://www.hagtech.com/pdf/ac128model.pdf (read 2026-10-19): 'Straight from " +
+                    "data sheet we can read typical forward gain: BF = 90'; verbatim model card:\n" +
+                    ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
+                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
+                sourceKind: "published-spice-model",
+                url: "http://www.hagtech.com/pdf/ac128model.pdf",
+                quote: ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
+                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
+                author: "Jim Hagerman",
+                retrievedDate: "2026-10-19",
+                whyNoBetterSource: "Same search as the IS record: no DC hFE bin in any located " +
+                    "original-manufacturer material; the card's BF = 90 is the published value " +
+                    "(the Holmes/Whitehead specimen reads 229.6 -- hot specimen, disclosed).",
+            },
+        },
+    },
+    {
+        // Wave 4 mixed: IS from the original Valvo sheet (datasheet basis, third-party
+        // host per the owner rule), BF from a published single-specimen extraction
+        // (community). The Valvo VBE row is a DC bias point (HF equivalent-circuit header
+        // states the -U_CE = 6 V, I_C = 1 mA bias); the 1 kHz alpha_e = 100 (45-225) row
+        // in the same table is small-signal and excluded by rule. The headline 150 mV is
+        // transcribed with its printed spread (125-185 mV), not midpointed: 150 mV is the
+        // sheet's stated value (spread-implied IS range 0.78-7.95 uA, disclosed). The
+        // Holmes specimen IS = 1.423 uA sits inside that spread. Edition inferred from
+        // the scan family (Dioden und Transistoren 1959, title page not in the available
+        // images): disclosed. Polarity is structural (PNP).
+        partIds: ["OC44"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 3.0207e-6,
+                basis: "derived",
+                source: "Valvo OC44/OC45 HF-Transistoren sheet p28 (original-manufacturer Valvo sheet, " +
+                    "third-party host wp.pedalia.org, scan read visually, no text layer): " +
+                    "'HF-Ersatzschaltbild fuer Emitterschaltung ... bei -U_CE = 6 V, I_C = 1 mA' " +
+                    "header with '-U_BE = 150 mV (125 bis 185 mV)' (DC bias point of the HF " +
+                    "equivalent circuit; OC45 sibling column reads 170 mV (145-195 mV))",
+                derivation: "Printed VBE headline 150 mV at -U_CE = 6 V, I_C = 1 mA (active region, " +
+                    "within the form-1 IC <= 20 mA gate; the printed spread 125-185 mV is quoted " +
+                    "but the headline 150 mV is transcribed, not midpointed); IS = IC * exp(-Vbe / " +
+                    "Vt) with n = 1 (form 1): 0.001 * exp(-0.150 / 0.025852) = 3.0207e-6 A " +
+                    "(spread-implied IS range 0.78-7.95 uA).",
+            },
+            forwardBeta: {
+                value: 307,
+                basis: "community",
+                source: "Holmes/Holters/van Walstijn DAFx-2017 Table 1 ('Comparison of Germanium Bipolar " +
+                    "Junction Transistor Models for Real-Time Circuit Simulation', Proc. 20th Int. " +
+                    "Conf. on Digital Audio Effects, Edinburgh, Sept. 2017) via " +
+                    "https://grwhitehead.github.io/germaniumbjts (Greg Whitehead repo page, read " +
+                    "2026-10-19): verbatim model card:\n" +
+                    ".MODEL OC44 PNP(IS=1.423u BF=307.0 BR=20.27 NF=1.022 NR=1.025 VT=25.5m VAF=8.167 " +
+                    "VAR=14.84 IKF=43.82m IKR=611.7m ISE=30.54n ISC=213.5n NE=1.316 NC=1.258 RB=32.83 " +
+                    "RE=968.7m RC=989.9u CEB=410p CCB=10p)",
+                sourceKind: "published-spice-model",
+                url: "https://grwhitehead.github.io/germaniumbjts",
+                quote: ".MODEL OC44 PNP(IS=1.423u BF=307.0 BR=20.27 NF=1.022 NR=1.025 VT=25.5m VAF=8.167 " +
+                    "VAR=14.84 IKF=43.82m IKR=611.7m ISE=30.54n ISC=213.5n NE=1.316 NC=1.258 RB=32.83 " +
+                    "RE=968.7m RC=989.9u CEB=410p CCB=10p)",
+                author: "B. Holmes, M. Holters, M. van Walstijn (via Greg Whitehead)",
+                retrievedDate: "2026-10-19",
+                whyNoBetterSource: "The Valvo sheet's only gain number is the 1 kHz small-signal alpha_e = 100 " +
+                    "(45-225), excluded by rule; Mullard short-form/electronics-notes give " +
+                    "small-signal hfe only. No DC hFE bin exists in any located " +
+                    "original-manufacturer material. The card is one specimen's extraction (its " +
+                    "IS = 1.423 uA sits inside the Valvo VBE spread 0.78-7.95 uA).",
+            },
+        },
+    },
+    {
+        // Wave 5. Ferranti ZTX107/108/109 series (ZTX107 Series, undated image-only scan
+        // read visually, third-party host) p2, CHARACTERISTICS (at 25C ambient): the
+        // ZTX109 column prints 'Emitter-base voltage VBE, IC = 2 mA, VCE = 5 V: MIN 0.6
+        // MAX 0.7 V' (active-region Vbe, limits not TYP) and 'Static forward current
+        // transfer ratio hFE, ZTX108C/109C row: ZTX109 MIN 450 MAX 900 at IC = 2 mA,
+        // VCE = 5 V'. The VCE(sat) rows are starred TYPICAL figures and are excluded.
+        partIds: ["ZTX109C"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Ferranti ZTX107/108/109 series " +
+                    "(ZTX107 Series, undated scan) p2: 'Emitter-base voltage VBE, IC = 2 mA, VCE = 5 V: " +
+                    "ZTX109 MIN 0.6 MAX 0.7 V' (no TYP printed)",
+                derivation: "Printed ZTX109 VBE range 0.6-0.7 V at IC = 2 mA, VCE = 5 V (active region, " +
+                    "IC within the form-1 <= 20 mA gate); arithmetic midpoint 0.65 V (form 2); " +
+                    "IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): 0.002 * exp(-0.65 / 0.025852) = " +
+                    "2.4071917e-14.",
+            },
+            forwardBeta: {
+                value: 636.3961031,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Ferranti ZTX107/108/109 series p2: " +
+                    "'Static forward current transfer ratio hFE, IC = 2 mA, VCE = 5 V, ZTX108C/109C row: " +
+                    "ZTX109 MIN 450 MAX 900' (the unbinned 109 row is 240-900; the 10 uA row is 100-300)",
+                derivation: "Printed ZTX109C hFE bin 450-900 at IC = 2 mA, VCE = 5 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(450 * 900) = 636.3961031.",
+            },
+        },
+    },
+    {
+        // Wave 5. Own title sheet (not a 2N2222A alias): onsemi P2N2222A/D, Jan 2013
+        // Rev. 7, p2. The DC rows are MIN-only and the VBE(sat) rows are high-current,
+        // so only the small-signal bin qualifies (the shipped 2N2222A precedent, same
+        // 50-300 arithmetic on the sibling die).
+        partIds: ["P2N2222A"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 122.4744871,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi P2N2222A/D, Jan 2013 Rev. 7, " +
+                    "p2, SMALL-SIGNAL CHARACTERISTICS: 'Small-Signal Current Gain hfe, IC = 1.0 mAdc, " +
+                    "VCE = 10 Vdc, f = 1.0 kHz: MIN 50 MAX 300' (the DC hFE rows are MIN-only; VBE(sat) " +
+                    "0.6-1.2/2.0 V at 150/500 mA is high-current and excluded)",
+                derivation: "Printed P2N2222A small-signal hfe bin 50-300 at IC = 1.0 mA, VCE = 10 V, f = 1 kHz; " +
+                    "geometric midpoint (form 2, gains): sqrt(50 * 300) = 122.4744871.",
+            },
+        },
+    },
+    {
+        // Wave 5. Central Semiconductor 2N6428/2N6429 R1 (10-September-2019),
+        // ELECTRICAL CHARACTERISTICS (TA = 25C) with explicit MIN/MAX columns: the
+        // 1 mA/10 mA hFE rows are MIN-only (250/500), so the only pair is the 100 uA
+        // DC bin (a legitimate low-current bin, not high-current falloff).
+        partIds: ["2N6428"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 5.6552409e-14,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
+                    "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'VBE(ON), VCE = 5.0 V, " +
+                    "IC = 1.0 mA: 2N6428 MIN 0.56 MAX 0.66 V' (no TYP printed)",
+                derivation: "Printed 2N6428 VBE(ON) range 0.56-0.66 V at IC = 1.0 mA, VCE = 5.0 V (active " +
+                    "region, IC within the form-1 <= 20 mA gate); arithmetic midpoint 0.61 V (form 2); " +
+                    "IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): 0.001 * exp(-0.61 / 0.025852) = " +
+                    "5.6552409e-14.",
+            },
+            forwardBeta: {
+                value: 403.1128874,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
+                    "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 5.0 V, " +
+                    "IC = 100 uA: 2N6428 MIN 250 MAX 650' (the 1 mA/10 mA rows are MIN-only 250/500)",
+                derivation: "Printed 2N6428 hFE bin 250-650 at IC = 100 uA, VCE = 5.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(250 * 650) = 403.1128874.",
+            },
+        },
+    },
+    {
+        // Wave 5. Same Central sheet as 2N6428 (its higher-gain sibling column).
+        partIds: ["2N6429"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 5.6552409e-14,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
+                    "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'VBE(ON), VCE = 5.0 V, " +
+                    "IC = 1.0 mA: 2N6429 MIN 0.56 MAX 0.66 V' (no TYP printed; shared row with 2N6428)",
+                derivation: "Printed 2N6429 VBE(ON) range 0.56-0.66 V at IC = 1.0 mA, VCE = 5.0 V; arithmetic " +
+                    "midpoint 0.61 V (form 2); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.001 * exp(-0.61 / 0.025852) = 5.6552409e-14.",
+            },
+            forwardBeta: {
+                value: 790.569415,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
+                    "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 5.0 V, " +
+                    "IC = 100 uA: 2N6429 MIN 500 MAX 1250' (the 1 mA/10 mA rows are MIN-only 500)",
+                derivation: "Printed 2N6429 hFE bin 500-1250 at IC = 100 uA, VCE = 5.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(500 * 1250) = 790.569415.",
+            },
+        },
+    },
+    {
+        // Wave 5. BF-only (VBE(sat) is MAX-only at -100 mA: no IS). The A1015GR marking
+        // is named by the sheet's own marking diagram ('A1015 (GR, Y) = Device Code'),
+        // so no alias is involved; the GR bin matches the registered Toshiba 2SA1015-Y
+        // arithmetic (same 200-400 at -6 V/-2 mA).
+        partIds: ["A1015GR"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 282.8427125,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi KSA1015/D, Nov 2025 Rev. 3, " +
+                    "p2, ELECTRICAL CHARACTERISTICS: 'hFE1 DC Current Gain, VCE = -6 V, IC = -2 mA: " +
+                    "MIN 70 MAX 400' with 'hFE CLASSIFICATION O 70~140, Y 120~240, GR 200~400' " +
+                    "(marking diagram p1: 'A1015 (GR, Y) = Device Code'; VBE(sat) MAX-only -1.1 V " +
+                    "at -100 mA, excluded)",
+                derivation: "Printed GR hFE bin 200-400 at VCE = -6 V, IC = -2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 400) = 282.8427125. PNP polarity is structural, " +
+                    "not a registry value.",
+            },
+        },
+    },
+    {
+        // Wave 5. BF-only (VBE(sat) is MAX-only at 50 mA: no IS). The DC bin at 2 mA is
+        // the law's quantity (the small-signal 120-480 row at the same bias is not used).
+        partIds: ["MPS4124"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 207.8460969,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): onsemi MPS4124/D, Apr 2007 Rev. 4, " +
+                    "ON CHARACTERISTICS: 'DC Current Gain hFE, IC = 2.0 mA, VCE = 1.0 V: MIN 120 MAX 360' " +
+                    "(the 50 mA row is MIN-only 60; VBE(sat) MAX-only 0.95 V at 50 mA, excluded)",
+                derivation: "Printed MPS4124 hFE bin 120-360 at IC = 2.0 mA, VCE = 1.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(120 * 360) = 207.8460969.",
+            },
+        },
+    },
+    {
+        // Wave 5. A-bin of the BC546-550 family (vendored onsemi BC550/D sheet). Same
+        // family VBE row as the registered BC549C/BC550C/BC549B/BC547B/BC550 entries.
+        partIds: ["BC546A"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family sheet " +
+                    "BC546/547/548/549/550) p2, ELECTRICAL CHARACTERISTICS: 'VBE(on) Base-Emitter On " +
+                    "Voltage, VCE = 5 V, IC = 2 mA: MIN 580 TYP 660 MAX 700 mV'",
+                derivation: "Printed family VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA (active region, IC " +
+                    "within the form-1 <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 155.5634919,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
+                    "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800' (family DC row @ 2 mA/5 V: " +
+                    "MIN 110 MAX 800)",
+                derivation: "Printed A-bin hFE 110-220; geometric midpoint (form 2, gains): " +
+                    "sqrt(110 * 220) = 155.5634919.",
+            },
+        },
+    },
+    {
+        // Wave 5. A-bin, same family sheet and VBE row as BC546A above.
+        partIds: ["BC548A"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family sheet " +
+                    "BC546/547/548/549/550) p2, ELECTRICAL CHARACTERISTICS: 'VBE(on) Base-Emitter On " +
+                    "Voltage, VCE = 5 V, IC = 2 mA: MIN 580 TYP 660 MAX 700 mV'",
+                derivation: "Printed family VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 155.5634919,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
+                    "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800'",
+                derivation: "Printed A-bin hFE 110-220; geometric midpoint (form 2, gains): " +
+                    "sqrt(110 * 220) = 155.5634919.",
+            },
+        },
+    },
+    {
+        // Wave 5. B-bin, same family sheet and VBE row. BC548B.md's 'typ 290' is a
+        // workbench-runtime figure, not used: the registry derivation is the geometric
+        // 300 (BC547B/BC549B precedent, same B bin).
+        partIds: ["BC548B"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 1.6350012e-14,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family sheet " +
+                    "BC546/547/548/549/550) p2, ELECTRICAL CHARACTERISTICS: 'VBE(on) Base-Emitter On " +
+                    "Voltage, VCE = 5 V, IC = 2 mA: MIN 580 TYP 660 MAX 700 mV'",
+                derivation: "Printed family VBE(on) TYP 0.66 V at VCE = 5 V, IC = 2 mA; IS = IC * exp(-Vbe / Vt) " +
+                    "with n = 1 (form 1): 0.002 * exp(-0.66 / 0.025852) = 1.6350012e-14.",
+            },
+            forwardBeta: {
+                value: 300,
+                basis: "derived",
+                source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
+                    "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800'",
+                derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
+                    "sqrt(200 * 450) = 300.",
+            },
+        },
+    },
+    {
+        // Wave 5. Fairchild BC184C/D (2002-08-06, title names BC184C) via the sm0vpo
+        // mirror of the Fairchild original. DC bin at 2 mA preferred over the
+        // small-signal 240-900 row (2N3904/2SC1815 precedent).
+        partIds: ["BC184C"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 6.3312899e-14,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Fairchild BC184C/D (2002-08-06): " +
+                    "'VBE(on) Base-Emitter On Voltage, VCE = 5 V, IC = 2 mA: MIN 0.55 MAX 0.7 V' " +
+                    "(no TYP printed)",
+                derivation: "Printed BC184C VBE(on) range 0.55-0.7 V at VCE = 5 V, IC = 2 mA (active region, " +
+                    "IC within the form-1 <= 20 mA gate); arithmetic midpoint 0.625 V (form 2); " +
+                    "IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): 0.002 * exp(-0.625 / 0.025852) = " +
+                    "6.3312899e-14.",
+            },
+            forwardBeta: {
+                value: 447.2135955,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Fairchild BC184C/D (2002-08-06): " +
+                    "'hFE DC Current Gain, VCE = 5 V, IC = 2 mA: MIN 250 MAX 800' (the 10 uA row is " +
+                    "MIN-only 100, the 100 mA row MIN-only 130; small-signal hfe 240-900 not used)",
+                derivation: "Printed BC184C hFE bin 250-800 at VCE = 5 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(250 * 800) = 447.2135955.",
+            },
+        },
+    },
+    {
+        // Wave 5. BF-only (VBE(on) prints a single 0.85 V figure at 1 mA: a limit, not a
+        // range or typical, so no IS). Judgement call, disclosed: the 1 mA/10 mA DC rows
+        // print MIN-only 250, so the only pair is the 100 uA DC bin (a legitimate
+        // low-current bin, not high-current falloff).
+        partIds: ["2N5210"],
+        class: "bjt",
+        params: {
+            forwardBeta: {
+                value: 346.4101615,
+                basis: "derived",
+                source: "Fetched manufacturer sheet (no vendored copy): Fairchild 2N5210/MMBT5210 Rev. B " +
+                    "2002, ON CHARACTERISTICS: 'hFE DC Current Gain, IC = 100 uA, VCE = 5.0 V: MIN 200 " +
+                    "MAX 600' (the IC = 1.0/10 mA rows print MIN-only 250; VBE(on) 0.85 V at 1.0 mA is " +
+                    "a single-figure limit, excluded)",
+                derivation: "Printed 2N5210 hFE bin 200-600 at IC = 100 uA, VCE = 5.0 V; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 600) = 346.4101615.",
+            },
+        },
+    },
+    {
+        // Wave 5. Unbinned 2SC732 (ranks GR/BL registered wave-3; only these two ranks
+        // exist). Vendored Toshiba 2SC732TM 1996-09-02 scan p1 read visually (no text
+        // layer): hFE MIN 200 MAX 700 at 6 V/2 mA with the GR:200~400/BL:350~600 note,
+        // VBE TYP 0.65 at 6 V/2 mA. Unbinned full-range midpoint (2SC2240 precedent).
+        partIds: ["2SC732"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 2.4071917e-14,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, image-only scan " +
+                    "read visually) p1, ELECTRICAL CHARACTERISTICS (Ta = 25C): 'Base-Emitter Voltage VBE, " +
+                    "VCE = 6 V, IC = 2 mA: TYP 0.65 V'",
+                derivation: "Printed VBE TYP 0.65 V at VCE = 6 V, IC = 2 mA (active region, IC within the " +
+                    "form-1 <= 20 mA gate); IS = IC * exp(-Vbe / Vt) with n = 1 (form 1): " +
+                    "0.002 * exp(-0.65 / 0.025852) = 2.4071917e-14 (shared row with the GR/BL ranks).",
+            },
+            forwardBeta: {
+                value: 374.1657387,
+                basis: "derived",
+                source: "2SC732/datasheets/toshiba-2sc732.pdf (Toshiba 2SC732TM, 1996-09-02, scan read " +
+                    "visually) p1: 'DC Current Gain hFE (Note), VCE = 6 V, IC = 2 mA: MIN 200 MAX 700' " +
+                    "with 'Note: hFE Classification GR: 200~400, BL: 350~600'",
+                derivation: "Printed unbinned hFE range 200-700 at VCE = 6 V, IC = 2 mA; geometric midpoint " +
+                    "(form 2, gains): sqrt(200 * 700) = 374.1657387.",
+            },
+        },
+    },
+    {
+        // Wave 5. IS-only via the manufacturer-published model (2N2222A/2N5088 precedent;
+        // model BF 480 is a MODPEX fit value and is NOT adopted). No datasheet hFE pair
+        // exists (rows are MIN-only), so BF gap-fills the class default. ZTX618 is a 3.5 A
+        // power device (EOL per PCN-2824) serving one DIY pedal; the row is data, not a
+        // relevance claim.
+        partIds: ["ZTX618"],
+        class: "bjt",
+        params: {
+            saturationCurrent: {
+                value: 5.611e-13,
+                basis: "manufacturer-model",
+                source: "Diodes Inc ZTX618 model file, " +
+                    "https://www.diodes.com/spice/download/2436/ZTX618.spice.txt " +
+                    "(linked from the official ZTX618 part page; Zetex v1.0, last revised 8/7/93), " +
+                    "verbatim card:\n" +
+                    "    .MODEL ZTX618  NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51\n" +
+                    "+               ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25\n" +
+                    "+               ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025\n" +
+                    "+               CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12\n" +
+                    "+               TF =0.95E-9 TR =2.25E-9",
+                modelFileUrl: "https://www.diodes.com/spice/download/2436/ZTX618.spice.txt",
+                modelLine: "    .MODEL ZTX618  NPN IS =5.611E-13 NF =1.0022 BF =480 IKF=4.6 VAF=51\n" +
+                    "+               ISE=1.73E-13 NE =1.4 NR =1.0002 BR =200 IKR=3 VAR=25\n" +
+                    "+               ISC=7.3152E-13 NC =1.47 RB =0.032 RE =0.027 RC =0.025\n" +
+                    "+               CJC=59E-12 MJC=0.2651 VJC=0.3051 CJE=216E-12\n" +
+                    "+               TF =0.95E-9 TR =2.25E-9",
+            },
+        },
+    },
+]);
+//# sourceMappingURL=bjt.js.map