@vessel-dsp/compiler 0.18.1 → 0.21.0

package/dist/registry-data/bjt.js

@@ -40,6 +40,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 229, card '.model 2N3904 NPN': " +
+                    "'Bf=300' = 300 against this record's 173.2 (independent published fit, registry/card " +
+                    "ratio 0.58); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L229",
                 source: "2N3904/datasheets/2n3904.pdf (onsemi 2N3904/D, Oct 2024 Rev. 3) p2: 'DC Current Gain, " +
                     "IC = 10 mA, VCE = 1.0 V, MIN 100 MAX 300' (the 0.1/1.0/50/100 mA rows are MIN-only; " +
                     "Note 3: pulse test)",
@@ -66,6 +72,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 231, card '.model 2N3906 PNP': " +
+                    "'BF=200' = 200 against this record's 173.2 (independent published fit, registry/card " +
+                    "ratio 0.87); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L231",
                 source: "2N3906/datasheets/2n3906.pdf (onsemi 2N3906/D, Feb 2010 Rev. 4) p2: 'DC Current Gain, " +
                     "IC = 10 mA, VCE = 1.0 V, MIN 100 MAX 300' (the 0.1/1.0/50/100 mA rows are MIN-only; " +
                     "Note 2: pulse test)",
@@ -87,6 +99,13 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 5.911e-15,
                 basis: "manufacturer-model",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 343, card '.MODEL 2N5088 NPN': " +
+                    "'IS=5.911f' = 5.911e-15 against this record's 5.911e-15 (identical figure -- a mirror of " +
+                    "the cited card or the same printed number, so a transcription check, not an independent " +
+                    "witness); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L343",
                 source: "Manufacturer datasheet onsemi 2N5088 / MMBT5088 / 2N5089 / MMBT5089 NPN General " +
                     "Purpose Amplifier (2N5088-D; Fairchild-integration printing, opens 'Is Now Part of' " +
                     "ON Semiconductor), PDF p3 'Spice Model' block, " +
@@ -102,6 +121,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 700,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 343, card '.MODEL 2N5088 NPN': " +
+                    "'BF=1122' = 1122 against this record's 700 (independent published fit, registry/card " +
+                    "ratio 0.62); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L343",
                 source: "2N5088/datasheets/2n5088.pdf (onsemi 2N5088/D, Mar 2007 Rev. 4) p3, ELECTRICAL " +
                     "CHARACTERISTICS (VCE = 5.0 V): 'Small-Signal Current Gain hfe, IC = 1.0 mA, f = 1.0 kHz, " +
                     "MIN 350 MAX 1400' (the 1.0/10 mA DC rows are MIN-only; the 100 mA 300-900 bin is " +
@@ -123,6 +148,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 900,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 239, card '.model 2N5089 NPN': " +
+                    "'Bf=1.434K' = 1434 against this record's 900 (independent published fit, registry/card " +
+                    "ratio 0.63); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L239",
                 source: "2N5088/datasheets/2n5088.pdf (onsemi 2N5088/D, Mar 2007 Rev. 4) p3, ELECTRICAL " +
                     "CHARACTERISTICS (VCE = 5.0 V), 2N5089 row: 'Small-Signal Current Gain hfe, IC = 1.0 mA, " +
                     "f = 1.0 kHz, MIN 450 MAX 1800' (DC rows MIN-only; VBE(on) shared MAX-only 0.8 V row)",
@@ -140,6 +171,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 221.3594362,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 747, card '.model 2SC1815 NPN': " +
+                    "'Bf=400' = 400 against this record's 221.4 (independent published fit, registry/card " +
+                    "ratio 0.55); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L747",
                 source: "2SC1815/datasheets/toshiba-2sc1815.pdf (Toshiba 2SC1815, 2007-11-01) p1, ELECTRICAL " +
                     "CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (1), VCE = 6 V, IC = 2 mA, MIN 70 " +
                     "MAX 700' (hFE (2) is TYP 100 at IC = 150 mA -- high-current, not the small-signal " +
@@ -188,6 +225,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 8.3261401e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Intusoft BJT " +
+                    "library (Copyright Intusoft 1988-1997), Models/Transistor/BJT/BJTN.LIB line 128, card " +
+                    "'.MODEL MPSA18 NPN': 'IS=86.4F' = 8.64e-14 against this record's 8.326e-14 (independent " +
+                    "published fit, registry/card ratio 0.96); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJTN.LIB#L128",
                 source: "Fetched manufacturer sheet (no vendored copy): onsemi MPSA18/D, Apr 2007 Rev. 4, p3, ON " +
                     "CHARACTERISTICS: 'Base-Emitter On Voltage VBE(on), IC = 1.0 mA, VCE = 5.0 V, TYP 0.6 " +
                     "MAX 0.7 V' (Note 2: pulse test)",
@@ -222,6 +265,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 3.88184e-14,
                 basis: "manufacturer-model",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): uncategorized " +
+                    "collection file, Models/uncategorized/spice_complete/zmodels.lib line 24, card '.MODEL " +
+                    "2N2222A NPN': 'IS =3.0611E-14' = 3.061e-14 against this record's 3.882e-14 (independent " +
+                    "published fit, registry/card ratio 1.27); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/spice_complete/zmodels.lib#L24",
                 source: "Manufacturer model file https://www.onsemi.com/download/models/txt/2n2222a.lib.txt " +
                     "(onsemi 2N2222A PSpice, MODPEX-generated, model generated on Feb 28, 13), card lines:\n" +
                     ".MODEL Q2n2222a npn\n+IS=3.88184e-14 BF=929.846 NF=1.10496 VAF=16.5003",
@@ -234,6 +283,12 @@ export const bjtRegistryRecords = definePartData([
                 // (far below fT 300 MHz, so approx. the DC beta) is the region-correct figure.
                 value: 122.4744871,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): uncategorized " +
+                    "collection file, Models/uncategorized/spice_complete/zmodels.lib line 24, card '.MODEL " +
+                    "2N2222A NPN': 'BF =220' = 220 against this record's 122.5 (independent published fit, " +
+                    "registry/card ratio 0.56); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/spice_complete/zmodels.lib#L24",
                 source: "Fetched manufacturer sheet (no vendored copy): onsemi P2N2222A/D, Jan 2013 Rev. 7, p2, " +
                     "SMALL-SIGNAL CHARACTERISTICS: 'Small-Signal Current Gain hfe, IC = 1.0 mA, " +
                     "VCE = 10 V, f = 1.0 kHz, MIN 50 MAX 300' (DC hFE rows at 0.1/1.0/10 mA are MIN-only; " +
@@ -260,6 +315,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 579.6550698,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 539, card '.model BC549C NPN': " +
+                    "'Bf=493.2' = 493.2 against this record's 579.7 (independent published fit, registry/card " +
+                    "ratio 1.18); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L539",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, p2, hFE " +
                     "CLASSIFICATION table: 'C: 420 ~ 800' (the family hFE row is MIN 110 MAX 800 at VCE = 5 V, " +
                     "IC = 2 mA; the C bin is the bin this part is)",
@@ -290,6 +351,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 296.6479395,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): uncategorized " +
+                    "collection file, Models/uncategorized/spice_complete/zmodels.lib line 3279, card '.MODEL " +
+                    "BC108 NPN': 'BF =400' = 400 against this record's 296.6 (independent published fit, " +
+                    "registry/card ratio 0.74); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/spice_complete/zmodels.lib#L3279",
                 source: "BC109/datasheets/farnell-bc107-bc108-bc109.pdf (Multicomp BC107/BC108/BC109, V1.0 " +
                     "30/05/05) p3: 'DC Current Gain hFE, IC = 2 mA, VCE = 5 V: BC108 MIN 110 MAX 800' " +
                     "(BC107 110-450 and BC109 200-800 are the sibling rows; the small-signal hfe " +
@@ -346,6 +413,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 579.6550698,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 540, card '.model BC550C NPN': " +
+                    "'Bf=493.2' = 493.2 against this record's 579.7 (independent published fit, registry/card " +
+                    "ratio 1.18); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L540",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
                     "CLASSIFICATION table: 'C: 420 ~ 800' (the family hFE row is MIN 110 MAX 800 " +
                     "at VCE = 5 V, IC = 2 mA; the C bin is the bin this part is)",
@@ -371,6 +444,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 300,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 369, card '.MODEL BC549B NPN': " +
+                    "'BF=458.7' = 458.7 against this record's 300 (independent published fit, registry/card " +
+                    "ratio 0.65); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L369",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
                     "CLASSIFICATION table: 'B: 200 ~ 450'",
                 derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
@@ -387,6 +466,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 1.6350012e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Bordodynov's " +
+                    "Electronics lib copy of the LTspice standard library, Models/uncategorized/Bordodynovs " +
+                    "Electronics Lib/cmp/standard.bjt line 393, card '.MODEL BC547B__ NPN': 'IS=20F' = 2e-14 " +
+                    "against this record's 1.635e-14 (independent published fit, registry/card ratio 0.82); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/Bordodynovs%20Electronics%20Lib/cmp/standard.bjt#L393",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family " +
                     "sheet BC546/547/548/549/550), p2: 'Base-Emitter On Voltage VBE(on), VCE = 5 V, " +
                     "IC = 2 mA, MIN 580 TYP 660 MAX 700 mV' (one row for the family)",
@@ -396,6 +481,13 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 300,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Bordodynov's " +
+                    "Electronics lib copy of the LTspice standard library, Models/uncategorized/Bordodynovs " +
+                    "Electronics Lib/cmp/standard.bjt line 392, card '.model BC547B_ NPN': 'Bf=300' = 300 " +
+                    "against this record's 300 (identical figure -- a mirror of the cited card or the same " +
+                    "printed number, so a transcription check, not an independent witness); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/Bordodynovs%20Electronics%20Lib/cmp/standard.bjt#L392",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, hFE " +
                     "CLASSIFICATION table: 'B: 200 ~ 450' (by bin letter)",
                 derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
@@ -421,6 +513,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 296.6479395,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Intusoft BJT " +
+                    "library (Copyright Intusoft 1988-1997), Models/Transistor/BJT/BJTN.LIB line 177, card " +
+                    "'.MODEL BC550 NPN': 'BF=312' = 312 against this record's 296.6 (independent published " +
+                    "fit, registry/card ratio 0.95); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJTN.LIB#L177",
                 source: "BC550/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6), p2, " +
                     "family hFE row: MIN 110 MAX 800 at VCE = 5 V, IC = 2 mA (no bin for the " +
                     "unsuffixed label)",
@@ -530,6 +628,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 3.8411256e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 767, card '.model 2sc945 npn': " +
+                    "'IS=3.577E-14' = 3.577e-14 against this record's 3.841e-14 (independent published fit, " +
+                    "registry/card ratio 1.07); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L767",
                 source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258, scan, read " +
                     "visually, no text layer) ELECTRICAL CHARACTERISTICS (Ta = 25C): 'VBE Base to " +
                     "Emitter Voltage, MIN 0.55 TYP 0.62 MAX 0.65 V at VCE = 6.0 V, IC = 1.0 mA'",
@@ -540,6 +644,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 200,
                 basis: "datasheet",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 767, card '.model 2sc945 npn': " +
+                    "'BF=2.382E+02' = 238.2 against this record's 200 (independent published fit, " +
+                    "registry/card ratio 0.84); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L767",
                 source: "2SC945/datasheets/nec-2sc945.pdf (NEC 2SC945 databook p258) ELECTRICAL " +
                     "CHARACTERISTICS: 'hFE2 DC Current Gain, MIN 90 TYP 200 MAX 600 at VCE = 6.0 V, " +
                     "IC = 1.0 mA' (the hFE1 row at 0.1 mA is not the law's bias; the rank table " +
@@ -653,6 +763,13 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 374.1657387,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): vendor file " +
+                    "under Models/Manufacturer/TRT-Electronics, " +
+                    "Models/Manufacturer/TRT-Electronics/2sc3378.lib line 1, card '.model Q2SC3378 NPN': " +
+                    "'Bf=300' = 300 against this record's 374.2 (independent published fit, registry/card " +
+                    "ratio 1.25); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Manufacturer/TRT-Electronics/2sc3378.lib#L1",
                 source: "Toshiba MINI PACKAGE SERIES selection table (67C 09139 D T-27-01, third-party " +
                     "scan) 'MINI PACKAGE SERIES' table, 2SC3378 column, read visually at high " +
                     "magnification: 'hFE, VCE = 6 V, IC = 2 mA, 200~700' (no MIN/MAX/TYP split, no " +
@@ -695,6 +812,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 520,
                 basis: "datasheet",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 526, card '.model BC109C NPN': " +
+                    "'Bf=677' = 677 against this record's 520 (independent published fit, registry/card ratio " +
+                    "0.77); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L526",
                 source: "BC109C/datasheets/farnell-bc109c.pdf (Farnell/Multicomp BC109 Series V1.0 " +
                     "08/04/06) p2, Electrical Characteristics (Ta = 25C), C Group: 'DC Current hFE, " +
                     "IC = 2 mA, VCE = 5 V, MIN 420 MAX 800'; and the original Philips BC107/108/109 " +
@@ -733,6 +856,10 @@ export const bjtRegistryRecords = definePartData([
         // the family; the Farnell/Multicomp reprint of the same family prints MIN/MAX only.
         partIds: ["BC107B"],
         class: "bjt",
+        note: "saturationCurrent disagrees with KiCad-Spice-Library (Models/Transistor/BJT/BJT.lib line " +
+            "521, card '.model BC107B NPN': 'Is=7.049f' = 7.049e-15, ltwiki Standard.* mirror): this " +
+            "record's 7.682e-14 is 11x above it; not corroborated, kept as cited because the two are " +
+            "different fits with their own emission coefficients, flagged for a bench check.",
         params: {
             saturationCurrent: {
                 value: 7.6822511e-14,
@@ -748,6 +875,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 290,
                 basis: "datasheet",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 521, card '.model BC107B NPN': " +
+                    "'Bf=381.7' = 381.7 against this record's 290 (independent published fit, registry/card " +
+                    "ratio 0.76); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L521",
                 source: "Philips Semiconductors BC107/108/109 Product Specification 1997 Sep 03 (M3D125) " +
                     "p4: 'hFE DC current gain, IC = 2 mA, VCE = 5 V: BC107B/BC108B/BC109B MIN 200 " +
                     "TYP 290 MAX 450'",
@@ -779,6 +912,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 86.6025404,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 324, card '.MODEL 2N4125 PNP': " +
+                    "'BF=85.04' = 85.04 against this record's 86.6 (independent published fit, registry/card " +
+                    "ratio 1.02); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L324",
                 source: "2N4125/datasheets/2n4125.pdf (Fairchild Semiconductor 2N4125, 1997, PNP General " +
                     "Purpose Amplifier) p2, Electrical Characteristics (TA = 25C): 'hFE DC Current " +
                     "Gain, VCE = 1.0 V, IC = 2.0 mA, MIN 50 MAX 150' (the 50 mA row is MIN-only 25; " +
@@ -798,6 +937,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 207.8460969,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 237, card '.model 2N4126 PNP': " +
+                    "'Bf=203.7' = 203.7 against this record's 207.8 (independent published fit, registry/card " +
+                    "ratio 1.02); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L237",
                 source: "Central Semiconductor 2N4123-2N4126 R1 (12-Jan-2016, my.centralsemi.com) p1, " +
                     "ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 1.0 V, IC = 2.0 mA, 2N4126 " +
                     "MIN 120 MAX 360' (the 50 mA row is MIN-only 60; small-signal hfe at 1 kHz not used)",
@@ -816,6 +961,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 3.8411256e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 766, card '.model 2sa733 pnp': " +
+                    "'IS=55.9f' = 5.59e-14 against this record's 3.841e-14 (independent published fit, " +
+                    "registry/card ratio 0.69); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L766",
                 source: "NEC 2SA733 DATA SHEET Doc. No. D10868EJ7V0DS00 (7th edition, March 2004, via " +
                     "renesas.com) p1, ELECTRICAL CHARACTERISTICS (TA = 25C): 'Base to Emitter Voltage " +
                     "VBE, VCE = -6.0 V, IC = -1.0 mA, MIN -0.58 TYP -0.62 MAX -0.68 V' magnitudes (PNP)",
@@ -826,6 +977,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 200,
                 basis: "datasheet",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 766, card '.model 2sa733 pnp': " +
+                    "'BF=205' = 205 against this record's 200 (independent published fit, registry/card ratio " +
+                    "0.98); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L766",
                 source: "NEC 2SA733 DATA SHEET D10868EJ7V0DS00 (7th ed, March 2004) p1: 'DC Current Gain " +
                     "hFE, VCE = -6.0 V, IC = -1.0 mA, MIN 90 TYP 200 MAX 600' (the hFE(2) row at " +
                     "-150 mA is high-current falloff; ranks R/Q/P/E split below)",
@@ -887,6 +1044,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 167.3320053,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 749, card '.model 2SA1015 PNP': " +
+                    "'Bf=110' = 110 against this record's 167.3 (independent published fit, registry/card " +
+                    "ratio 1.52); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L749",
                 source: "Toshiba 2SA1015(L) Transistor Silicon PNP Epitaxial Type (PCT process), " +
                     "2003-03-27 reprint of the 1997-04-10 original (third-party host) p1, ELECTRICAL " +
                     "CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (1) (Note), VCE = -6 V, " +
@@ -931,6 +1094,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 374.1657387,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 758, card '.MODEL 2SC2240 NPN': " +
+                    "'BF=4.539950E+02' = 454 against this record's 374.2 (independent published fit, " +
+                    "registry/card ratio 0.82); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L758",
                 source: "2SC2240/datasheets/toshiba-2sc2240.pdf (Toshiba 2SC2240, 2007-11-01) p2: 'DC " +
                     "current gain hFE (Note), VCE = 6 V, IC = 2 mA, MIN 200 MAX 700' with 'Note: hFE " +
                     "classification GR: 200~400, BL: 350~700'",
@@ -962,13 +1131,17 @@ export const bjtRegistryRecords = definePartData([
         },
     },
     {
-        // Wave 4 community. Germanium PNP: Jim Hagerman's published AC128 SPICE model
-        // (paper + card). Provisional single sample: germanium varies enormously specimen
+        // IS: wave 4 community, Jim Hagerman's published AC128 SPICE model (paper + card).
+        // BF: the original Valvo sheet's printed TYP (2026-11-02; the vendored 8.63 scan
+        // prints B = 90 (55...175) at UCB = 0, IE = 50 mA, so the community card's BF = 90
+        // record was removed as the loader rule requires -- same number, datasheet basis).
+        // Provisional single sample for IS: germanium varies enormously specimen
         // to specimen, and the Holmes/Whitehead DAFx-2017 extraction of their own AC128
         // specimen reads IS = 20.66u, BF = 229.6 (same order of IS, hotter gain) --
         // disclosed as the corroborating one-sample. Polarity is structural (PNP).
         partIds: ["AC128"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         note: "Corroborating single-specimen extraction (Holmes/Holters/van Walstijn DAFx-2017 " +
             "Table 1 via https://grwhitehead.github.io/germaniumbjts, Greg Whitehead): " +
             ".MODEL AC128 PNP(IS=20.66u BF=229.6 BR=14.66 ...) -- a hot specimen; germanium " +
@@ -994,26 +1167,31 @@ export const bjtRegistryRecords = definePartData([
                     "VCE, ICM and small-signal hfe, no Vbe/DC-hFE), the Valvo Datenbuch 1969-70 " +
                     "reprint (URL now 404), alldatasheet/GPD/NJSEMI AC128 sheets (non-original " +
                     "manufacturers and/or 1-4 pp short-form). No original-manufacturer AC128 sheet " +
-                    "with active-region Vbe + DC hFE bin is readable online. The Holmes/Whitehead " +
-                    "specimen corroborates the IS order.",
+                    "with active-region Vbe + DC hFE bin is readable online. The vendored Valvo 8.63 " +
+                    "scan (AC128/datasheets/ac128-valvo-1963-scan.pdf, read 2026-11-02) prints only " +
+                    "MAX-only -UBE limits (<= 300 mV at IE = 50 mA, <= 450 mV at 300 mA), above the " +
+                    "form-1 20 mA gate and limits rather than values, so no datasheet IS. The " +
+                    "Holmes/Whitehead specimen corroborates the IS order.",
             },
             forwardBeta: {
                 value: 90,
-                basis: "community",
-                source: "Jim Hagerman, 'AC128 Ge PNP Transistor SPICE Model' paper, 01/16/20, " +
-                    "http://www.hagtech.com/pdf/ac128model.pdf (read 2026-10-19): 'Straight from " +
-                    "data sheet we can read typical forward gain: BF = 90'; verbatim model card:\n" +
-                    ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
-                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
-                sourceKind: "published-spice-model",
-                url: "http://www.hagtech.com/pdf/ac128model.pdf",
-                quote: ".MODEL AC128 PNP + ( + BF = 90 + IS = 17u + RE = 220m + BR = 100m + VAF = 30 + " +
-                    "ISE = 190n + TF = 106n + TR = 10u + CJC = 100p + )",
-                author: "Jim Hagerman",
-                retrievedDate: "2026-10-19",
-                whyNoBetterSource: "Same search as the IS record: no DC hFE bin in any located " +
-                    "original-manufacturer material; the card's BF = 90 is the published value " +
-                    "(the Holmes/Whitehead specimen reads 229.6 -- hot specimen, disclosed).",
+                basis: "datasheet",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 224, card '.MODEL AC128 PNP': " +
+                    "'BF=90' = 90 against this record's 90 (identical figure -- a mirror of the cited card or " +
+                    "the same printed number, so a transcription check, not an independent witness); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L224",
+                source: "AC128/datasheets/ac128-valvo-1963-scan.pdf (Valvo 'AC 128 " +
+                    "Germanium-p-n-p-NF-Transistor', Valvo Halbleiterdioden und Transistoren, 'Vorläufige " +
+                    "Daten', page footer 8.63, p124; original-manufacturer scan, read visually 2026-11-02), " +
+                    "Kennwerte (Tj = 25 °C): 'Gleichstromverstärkung bei UCB = 0, IE = 50 mA: B = 90 " +
+                    "(55...175)' (the 300 mA row reads 90 (60...175) and the 1 A row 80 (45...165); the -UBE " +
+                    "rows are '≤ 300 mV' at IE = 50 mA and '≤ 450 mV' at 300 mA, MAX-only limits, so no " +
+                    "form-1 IS). The Newmarket 'Germanium Alloy Transistors' reference table's AC128 row " +
+                    "(newmarket/datasheets/newmarket-germanium-alloy-transistors-reference-table.pdf, '60 ... " +
+                    "175(0/300)') repeats the Valvo 300 mA spread and is not used: the original-manufacturer " +
+                    "TYP wins",
             },
         },
     },
@@ -1030,6 +1208,7 @@ export const bjtRegistryRecords = definePartData([
         // images): disclosed. Polarity is structural (PNP).
         partIds: ["OC44"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         params: {
             saturationCurrent: {
                 value: 3.0207e-6,
@@ -1048,6 +1227,13 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 307,
                 basis: "community",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Bordodynov's " +
+                    "Electronics lib copy of the LTspice standard library, Models/uncategorized/Bordodynovs " +
+                    "Electronics Lib/cmp/standard.bjt line 1434, card '.model OC44 pnp': 'BF=307' = 307 " +
+                    "against this record's 307 (identical figure -- a mirror of the cited card or the same " +
+                    "printed number, so a transcription check, not an independent witness); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/Bordodynovs%20Electronics%20Lib/cmp/standard.bjt#L1434",
                 source: "Holmes/Holters/van Walstijn DAFx-2017 Table 1 ('Comparison of Germanium Bipolar " +
                     "Junction Transistor Models for Real-Time Circuit Simulation', Proc. 20th Int. " +
                     "Conf. on Digital Audio Effects, Edinburgh, Sept. 2017) via " +
@@ -1134,6 +1320,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 5.6552409e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 349, card '.MODEL 2N6428 NPN': " +
+                    "'IS=45.000f' = 4.5e-14 against this record's 5.655e-14 (independent published fit, " +
+                    "registry/card ratio 1.26); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L349",
                 source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
                     "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'VBE(ON), VCE = 5.0 V, " +
                     "IC = 1.0 mA: 2N6428 MIN 0.56 MAX 0.66 V' (no TYP printed)",
@@ -1145,6 +1337,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 403.1128874,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 349, card '.MODEL 2N6428 NPN': " +
+                    "'BF=516.544' = 516.5 against this record's 403.1 (independent published fit, " +
+                    "registry/card ratio 0.78); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L349",
                 source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
                     "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 5.0 V, " +
                     "IC = 100 uA: 2N6428 MIN 250 MAX 650' (the 1 mA/10 mA rows are MIN-only 250/500)",
@@ -1161,6 +1359,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 5.6552409e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 350, card '.MODEL 2N6429 NPN': " +
+                    "'IS=45.000f' = 4.5e-14 against this record's 5.655e-14 (independent published fit, " +
+                    "registry/card ratio 1.26); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L350",
                 source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
                     "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'VBE(ON), VCE = 5.0 V, " +
                     "IC = 1.0 mA: 2N6429 MIN 0.56 MAX 0.66 V' (no TYP printed; shared row with 2N6428)",
@@ -1171,6 +1375,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 790.569415,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 350, card '.MODEL 2N6429 NPN': " +
+                    "'BF=516.544' = 516.5 against this record's 790.6 (independent published fit, " +
+                    "registry/card ratio 1.53); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L350",
                 source: "Fetched manufacturer sheet (no vendored copy): Central Semiconductor 2N6428/2N6429, " +
                     "R1 (10-September-2019), ELECTRICAL CHARACTERISTICS (TA = 25C): 'hFE, VCE = 5.0 V, " +
                     "IC = 100 uA: 2N6429 MIN 500 MAX 1250' (the 1 mA/10 mA rows are MIN-only 500)",
@@ -1228,6 +1438,12 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 1.6350012e-14,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 536, card '.model BC546B NPN': " +
+                    "'IS=2.39E-14' = 2.39e-14 against this record's 1.635e-14 (independent published fit, " +
+                    "registry/card ratio 0.68); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L536",
                 source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6, family sheet " +
                     "BC546/547/548/549/550) p2, ELECTRICAL CHARACTERISTICS: 'VBE(on) Base-Emitter On " +
                     "Voltage, VCE = 5 V, IC = 2 mA: MIN 580 TYP 660 MAX 700 mV'",
@@ -1238,6 +1454,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 300,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 536, card '.model BC546B NPN': " +
+                    "'BF=294.3' = 294.3 against this record's 300 (independent published fit, registry/card " +
+                    "ratio 1.02); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L536",
                 source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
                     "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800' (family DC row @ 2 mA/5 V: " +
                     "MIN 110 MAX 800)",
@@ -1268,6 +1490,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 447.2135955,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 242, card '.model 2N5087 PNP': " +
+                    "'Bf=254.1' = 254.1 against this record's 447.2 (independent published fit, registry/card " +
+                    "ratio 1.76); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L242",
                 source: "Fairchild 2N5086/2N5087/MMBT5087 Rev. B1 Sept 2003 (Fairchild-authored, via NAC Semi Authorized Datasheets FAIRS25010-1): 'hFE DC Current Gain, IC = -100 uA, VCE = -5.0 V, 5087 MIN 250 MAX 800'",
                 derivation: "Printed hFE bin 250-800 at IC = -100 uA, VCE = -5.0 V; geometric midpoint (form 2, gains): sqrt(250 * 800) = 447.2135955.",
             },
@@ -1281,7 +1509,12 @@ export const bjtRegistryRecords = definePartData([
         partIds: ["2N2907A"],
         class: "bjt",
         note: "The model's BF 297.85 is a fit and is NOT adopted (BF stays the derived 173.21); " +
-            "IS is taken as printed (2N2222A precedent).",
+            "IS is taken as printed (2N2222A precedent). " +
+            "saturationCurrent disagrees with KiCad-Spice-Library " +
+            "(Models/Manufacturer/TRT-Electronics/2n2907a.lib line 1, card '.model Q2N2907A PNP': " +
+            "'Is=650.6E-18' = 6.506e-16, vendor file under Models/Manufacturer/TRT-Electronics): this " +
+            "record's 1.529e-14 is 24x above it; not corroborated, kept as cited because the two are " +
+            "different fits with their own emission coefficients, flagged for a bench check.",
         params: {
             saturationCurrent: {
                 value: 15.294e-15,
@@ -1295,6 +1528,13 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): vendor file " +
+                    "under Models/Manufacturer/TRT-Electronics, " +
+                    "Models/Manufacturer/TRT-Electronics/2n2907a.lib line 1, card '.model Q2N2907A PNP': " +
+                    "'Bf=231.7' = 231.7 against this record's 173.2 (independent published fit, registry/card " +
+                    "ratio 0.75); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Manufacturer/TRT-Electronics/2n2907a.lib#L1",
                 source: "Central Semiconductor 2N2906/2N2907/2N2906A/2N2907A sheet (my.centralsemi.com 2n2906.PDF): 'hFE, VCE = 10 V, IC = 150 mA, 2N2907A MIN 100 MAX 300'",
                 derivation: "Printed hFE bin 100-300 at VCE = 10 V, IC = 150 mA; geometric midpoint (form 2, gains): sqrt(100 * 300) = 173.2050808.",
             },
@@ -1308,7 +1548,11 @@ export const bjtRegistryRecords = definePartData([
         partIds: ["2N4403"],
         class: "bjt",
         note: "The model's BF 255.25 is a fit and is NOT adopted (BF stays the derived 173.21); " +
-            "IS is taken as printed (2N2222A precedent).",
+            "IS is taken as printed (2N2222A precedent). " +
+            "saturationCurrent disagrees with KiCad-Spice-Library (Models/Transistor/BJT/BJT.lib line " +
+            "246, card '.model 2N4403 PNP': 'Is=650.6E-18' = 6.506e-16, ltwiki Standard.* mirror): " +
+            "this record's 1.683e-14 is 26x above it; not corroborated, kept as cited because the two " +
+            "are different fits with their own emission coefficients, flagged for a bench check.",
         params: {
             saturationCurrent: {
                 value: 16.832e-15,
@@ -1322,6 +1566,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 246, card '.model 2N4403 PNP': " +
+                    "'Bf=216.2' = 216.2 against this record's 173.2 (independent published fit, registry/card " +
+                    "ratio 0.80); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L246",
                 source: "Central Semiconductor 2N4402/2N4403 sheet (my.centralsemi.com 2N4402.PDF): 'hFE, VCE = 2.0 V, IC = 150 mA, 2N4403 MIN 100 MAX 300'",
                 derivation: "Printed hFE bin 100-300 at VCE = 2.0 V, IC = 150 mA; geometric midpoint (form 2, gains): sqrt(100 * 300) = 173.2050808.",
             },
@@ -1349,6 +1599,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 226, card '.model 2N2222 NPN': " +
+                    "'BF=200' = 200 against this record's 173.2 (independent published fit, registry/card " +
+                    "ratio 0.87); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L226",
                 source: "Central Semiconductor 2N2221/2N2222 sheet (my.centralsemi.com 2N2221.PDF, non-A types only): 'hFE, VCE = 10 V, IC = 150 mA, 2N2222 MIN 100 MAX 300'",
                 derivation: "Printed non-A hFE bin 100-300 at VCE = 10 V, IC = 150 mA; geometric midpoint (form 2, gains): sqrt(100 * 300) = 173.2050808.",
             },
@@ -1362,6 +1618,11 @@ export const bjtRegistryRecords = definePartData([
         // Corpus: Revv Chat Breaker (x2).
         partIds: ["MPSA06"],
         class: "bjt",
+        note: "saturationCurrent disagrees with KiCad-Spice-Library (Models/Transistor/BJT/BJTN.LIB " +
+            "line 121, card '.MODEL MPSA06 NPN': 'IS=50.7F' = 5.07e-14, Intusoft BJT library " +
+            "(Copyright Intusoft 1988-1997)): this record's 5.73e-13 is 11x above it; not " +
+            "corroborated, kept as cited because the two are different fits with their own emission " +
+            "coefficients, flagged for a bench check.",
         params: {
             saturationCurrent: {
                 value: 573.03e-15,
@@ -1410,6 +1671,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 155.5634919,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 535, card '.model BC546A NPN': " +
+                    "'Bf=253' = 253 against this record's 155.6 (independent published fit, registry/card " +
+                    "ratio 0.61); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L535",
                 source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
                     "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800' (family DC row @ 2 mA/5 V: " +
                     "MIN 110 MAX 800)",
@@ -1435,6 +1702,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 155.5634919,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 537, card '.model BC548A NPN': " +
+                    "'Bf=253' = 253 against this record's 155.6 (independent published fit, registry/card " +
+                    "ratio 0.61); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L537",
                 source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
                     "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800'",
                 derivation: "Printed A-bin hFE 110-220; geometric midpoint (form 2, gains): " +
@@ -1461,6 +1734,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 300,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): ltwiki " +
+                    "Standard.* mirror, Models/Transistor/BJT/BJT.lib line 538, card '.model BC548B NPN': " +
+                    "'Bf=374.6' = 374.6 against this record's 300 (independent published fit, registry/card " +
+                    "ratio 0.80); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Transistor/BJT/BJT.lib#L538",
                 source: "BC548B/datasheets/onsemi-bc550-d.pdf (onsemi BC550/D, Feb 2026 Rev. 6) p2: " +
                     "'hFE CLASSIFICATION A 110 ~ 220, B 200 ~ 450, C 420 ~ 800'",
                 derivation: "Printed B-bin hFE 200-450; geometric midpoint (form 2, gains): " +
@@ -1558,6 +1837,13 @@ export const bjtRegistryRecords = definePartData([
             saturationCurrent: {
                 value: 5.611e-13,
                 basis: "manufacturer-model",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): vendor file " +
+                    "under Models/Manufacturer/Zetex Semiconductors, Models/Manufacturer/Zetex " +
+                    "Semiconductors/ZMODELS.LIB line 1845, card '.MODEL ZTX618 NPN': 'IS=5.611E-13' = " +
+                    "5.611e-13 against this record's 5.611e-13 (identical figure -- a mirror of the cited " +
+                    "card or the same printed number, so a transcription check, not an independent witness); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Manufacturer/Zetex%20Semiconductors/ZMODELS.LIB#L1845",
                 source: "Diodes Inc ZTX618 model file, " +
                     "https://www.diodes.com/spice/download/2436/ZTX618.spice.txt " +
                     "(linked from the official ZTX618 part page; Zetex v1.0, last revised 8/7/93), " +
@@ -1588,6 +1874,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 374.1657387,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): Bordodynov's " +
+                    "Electronics lib copy of the LTspice standard library, Models/uncategorized/Bordodynovs " +
+                    "Electronics Lib/cmp/standard.bjt line 1440, card '.model 2SC3324 NPN': 'Bf=352.8' = " +
+                    "352.8 against this record's 374.2 (independent published fit, registry/card ratio 1.06); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/Bordodynovs%20Electronics%20Lib/cmp/standard.bjt#L1440",
                 source: "Fetched manufacturer sheet (no vendored copy): Toshiba 2SC3324 (2007-11-01) p1, " +
                     "ELECTRICAL CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (Note), VCE = 6 V, " +
                     "IC = 2 mA, MIN 200 MAX 700' (the VCE(sat) row is MAX-only 0.3 V at 10 mA and " +
@@ -1626,6 +1918,13 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 167.3320053,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): vendor file " +
+                    "under Models/Manufacturer/TRT-Electronics, " +
+                    "Models/Manufacturer/TRT-Electronics/2sa1048.lib line 2, card '.model Q2SA1048 PNP': " +
+                    "'Bf=110' = 110 against this record's 167.3 (independent published fit, registry/card " +
+                    "ratio 1.52); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/Manufacturer/TRT-Electronics/2sa1048.lib#L2",
                 source: "Fetched manufacturer sheet (no vendored copy): Toshiba 2SA1048(L) (2003-03-27) " +
                     "p1, ELECTRICAL CHARACTERISTICS (Ta = 25C): 'DC current gain hFE (Note), " +
                     "VCE = -6 V, IC = -2 mA, MIN 70 MAX 400' (PNP; the VCE(sat) row is TYP/MAX-only " +
@@ -1846,6 +2145,7 @@ export const bjtRegistryRecords = definePartData([
         // Corpus: Sola Sound Tone Bender MKI (OC75).
         partIds: ["OC75"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         params: {
             forwardBeta: {
                 value: 90,
@@ -1864,6 +2164,7 @@ export const bjtRegistryRecords = definePartData([
         // Corpus: Sola Sound Tone Bender MKII (two sheets) -- 12 instances.
         partIds: ["OC81D"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         params: {
             forwardBeta: {
                 value: 60,
@@ -1881,6 +2182,7 @@ export const bjtRegistryRecords = definePartData([
         // Same bias caveat as OC75. Corpus: EQD Tone Reaper (AC176).
         partIds: ["AC176"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         params: {
             forwardBeta: {
                 value: 111.8033989,
@@ -1908,6 +2210,7 @@ export const bjtRegistryRecords = definePartData([
         // default) and keep the row BF-less. Corpus: BearFoot Emerald Green, EQD Hoof.
         partIds: ["2N1308"],
         class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
         params: {
             saturationCurrent: {
                 value: 6.31226e-07,
@@ -1934,6 +2237,12 @@ export const bjtRegistryRecords = definePartData([
             forwardBeta: {
                 value: 173.2050808,
                 basis: "derived",
+                corroboration: "KiCad-Spice-Library (github.com/kicad-spice-library/KiCad-Spice-Library, user-collected " +
+                    "mirror of published SPICE cards; pinned commit a8688952, read 2026-11-03): uncategorized " +
+                    "collection file, Models/uncategorized/spice_complete/fairch.lib line 8276, card '.model " +
+                    "PN2222A NPN': 'Bf=255.9' = 255.9 against this record's 173.2 (independent published fit, " +
+                    "registry/card ratio 0.68); " +
+                    "https://github.com/kicad-spice-library/KiCad-Spice-Library/blob/a8688952bcaab19f567bc4db237b60bde03ef310/Models/uncategorized/spice_complete/fairch.lib#L8276",
                 source: "Fairchild PN2222A datasheet (Rev. 1.1.0, July 2014), ELECTRICAL " +
                     "CHARACTERISTICS: 'hFE DC Current Gain, IC = 150 mA, VCE = 10 V, " +
                     "MIN 100 MAX 300' (all other hFE rows MIN-only: 35/50/75/35/50/40)",
@@ -1942,5 +2251,1097 @@ export const bjtRegistryRecords = definePartData([
             },
         },
     },
+    {
+        // Newmarket germanium reference table (2026-11-02): BF-only rows from the one-page
+        // 'Germanium Alloy Transistors' PNP table. The table prints no Vbe, so no IS on any row
+        // (silicon-bias caveat as OC75). Two-sided hFE bins only: OC76/OC77 ('>45'), 2N1303
+        // ('>20') and 2N1309 ('>80') are MIN-only and stay out. Asterisked rows are the table's
+        // 1 kHz small-signal hfe and are admitted as the DC beta by the 2N2222A/2N5088
+        // precedent. AC176 (NPN table), OC75 and AC128 keep their original-manufacturer rows
+        // (Siemens, Mullard, Valvo); OC44N/OC45N are Newmarket's own N-suffix codes, registered as their own ids,
+        // not aliases of OC44. NKT275 is not on this table (its own community row closes this
+        // file). Polarity is structural (PNP).
+        partIds: ["ACY17"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 86.6025404,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 17': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 150(0/300)' (BVCEO 32 V, BVCBO 70 V, BVEBO 12 V, ICM 1.0 A, " +
+                    "VCEsat 0.3 V at (IC/IB) 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27714R carry no " +
+                    "gain information)",
+                derivation: "Printed hFE bin 50-150 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 150) = 86.6025404.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY18"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 69.2820323,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 18': 'hFE " +
+                    "(VCE/IC) (V/mA) 40 ... 120(0/300)' (BVCEO 30 V, BVCBO 50 V, BVEBO 12 V, ICM 1.0 A, " +
+                    "VCEsat 0.3 V at 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27715G carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 40-120 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(40 * 120) = 69.2820323.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY19"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 141.4213562,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 19': 'hFE " +
+                    "(VCE/IC) (V/mA) 80 ... 250(0/300)' (BVCEO 30 V, BVCBO 50 V, BVEBO 12 V, ICM 1.0 A, " +
+                    "VCEsat 0.3 V at 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27716E carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 80-250 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(80 * 250) = 141.4213562.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY20"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 85.1469318,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 20': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 145(0/50)' (BVCEO 20 V, BVCBO 40 V, BVEBO 12 V, ICM 1.0 A, VCEsat " +
+                    "0.2 V at 50/1.3 mA, max ICBO 10 uA at VCB 6 V, stock no. 27717C carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 50-145 at VCE/IC = 0/50 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 50 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 145) = 85.1469318.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY21"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 150,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 21': 'hFE " +
+                    "(VCE/IC) (V/mA) 90 ... 250(0/50)' (BVCEO 20 V, BVCBO 40 V, BVEBO 12 V, ICM 1.0 A, VCEsat " +
+                    "0.2 V at 50/1.3 mA, max ICBO 10 uA at VCB 6 V, stock no. 27718A carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 90-250 at VCE/IC = 0/50 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 50 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(90 * 250) = 150.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY22"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 94.8683298,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 22': 'hFE " +
+                    "(VCE/IC) (V/mA) 30 ... 300(0/300)' (BVCEO 15 V, BVCBO 20 V, BVEBO 12 V, ICM 1.0 A, " +
+                    "VCEsat 0.3 V at 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27719X carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 30-300 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(30 * 300) = 94.8683298.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY39"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 86.6025404,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 39': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 150(0/300)' (BVCEO 40 V, BVCBO 110 V, BVEBO 12 V, ICM 1.0 A, " +
+                    "VCEsat 0.3 V at 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27720B carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 50-150 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 150) = 86.6025404.",
+            },
+        },
+    },
+    {
+        partIds: ["ACY40"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 45.8257569,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'ACY 40': 'hFE " +
+                    "(VCE/IC) (V/mA) 30 ... 70(0/300)' (BVCEO 18 V, BVCBO 32 V, BVEBO 12 V, ICM 1.0 A, VCEsat " +
+                    "0.3 V at 300/15 mA, max ICBO 10 uA at VCB 6 V, stock no. 27721X carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 30-70 at VCE/IC = 0/300 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 300 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(30 * 70) = 45.8257569.",
+            },
+        },
+    },
+    {
+        partIds: ["OC44N"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 94.8683298,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'OC 44N': 'hFE " +
+                    "(VCE/IC) (V/mA) 40 ... 225(6/1)' (BVCBO 15 V, BVEBO 12 V, ICM 0.01 A, max ICBO 10 uA at " +
+                    "VCB 15 V, stock no. 31452H carry no gain information)",
+                derivation: "Printed hFE bin 40-225 at VCE/IC = 6/1 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(40 * 225) = 94.8683298.",
+            },
+        },
+    },
+    {
+        partIds: ["OC45N"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 55.9016994,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'OC 45N': 'hFE " +
+                    "(VCE/IC) (V/mA) 25 ... 125(6/1)' (BVCBO 15 V, BVEBO 12 V, ICM 0.01 A, max ICBO 10 uA at " +
+                    "VCB 15 V, stock no. 31453F carry no gain information)",
+                derivation: "Printed hFE bin 25-125 at VCE/IC = 6/1 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(25 * 125) = 55.9016994.",
+            },
+        },
+    },
+    {
+        partIds: ["OC72"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 73.4846923,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'OC 72': 'hFE " +
+                    "(VCE/IC) (V/mA) 45 ... 120(5.4/10)' (BVCEO 16 V, BVCBO 32 V, BVEBO 10 V, ICM 0.125 A, " +
+                    "VCEsat <0.3 V at 125/12.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 31454D carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 45-120 at VCE/IC = 5.4/10 V/mA as printed; geometric " +
+                    "midpoint (form 2, gains): sqrt(45 * 120) = 73.4846923.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT11"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 140.7124728,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 11': 'hFE " +
+                    "(VCE/IC) (V/mA) 90 ... 220(4.5/1)*' (BVCEO 10 V, BVCBO 18 V, BVEBO 12 V, ICM 0.075 A, " +
+                    "VCEsat <0.2 V at 8/0.5 mA, max ICBO 5 uA at VCB 6 V, stock no. 16635X carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 90-220; the asterisked row is the table's '*hfe (f = 1 kHz)' " +
+                    "small-signal bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the " +
+                    "2N2222A/2N5088 precedent (1 kHz is far below fT, so hfe approximates hFE); geometric " +
+                    "midpoint (form 2, gains): sqrt(90 * 220) = 140.7124728.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT12"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 90,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 12': 'hFE " +
+                    "(VCE/IC) (V/mA) 45 ... 180(4.5/1)' (BVCEO 10 V, BVCBO 18 V, BVEBO 12 V, ICM 0.075 A, " +
+                    "VCEsat <0.2 V at 8/0.5 mA, max ICBO 5 uA at VCB 6 V, stock no. 16636R carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 45-180 at VCE/IC = 4.5/1 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(45 * 180) = 90.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT213"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 80.6225775,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 213': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 130(4.5/1)*' (BVCBO 32 V, BVEBO 10 V, ICM 0.25 A, VCEsat <0.2 V " +
+                    "at 25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27704B carry no gain information)",
+                derivation: "Printed hFE bin 50-130; the asterisked row is the table's '*hfe (f = 1 kHz)' " +
+                    "small-signal bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the " +
+                    "2N2222A/2N5088 precedent (1 kHz is far below fT, so hfe approximates hFE); geometric " +
+                    "midpoint (form 2, gains): sqrt(50 * 130) = 80.6225775.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT214"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 47.4341649,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 214': 'hFE " +
+                    "(VCE/IC) (V/mA) 30 ... 75(4.5/1)*' (BVCBO 32 V, BVEBO 10 V, ICM 0.25 A, VCEsat <0.2 V at " +
+                    "25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27705X carry no gain information)",
+                derivation: "Printed hFE bin 30-75; the asterisked row is the table's '*hfe (f = 1 kHz)' small-signal " +
+                    "bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the 2N2222A/2N5088 precedent " +
+                    "(1 kHz is far below fT, so hfe approximates hFE); geometric midpoint (form 2, gains): " +
+                    "sqrt(30 * 75) = 47.4341649.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT216"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 25.9807621,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 216': 'hFE " +
+                    "(VCE/IC) (V/mA) 15 ... 45(4.5/1)*' (BVCBO 32 V, BVEBO 10 V, ICM 0.25 A, VCEsat <0.2 V at " +
+                    "25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27707G carry no gain information)",
+                derivation: "Printed hFE bin 15-45; the asterisked row is the table's '*hfe (f = 1 kHz)' small-signal " +
+                    "bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the 2N2222A/2N5088 precedent " +
+                    "(1 kHz is far below fT, so hfe approximates hFE); geometric midpoint (form 2, gains): " +
+                    "sqrt(15 * 45) = 25.9807621.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT217"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 86.6025404,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 217': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 150(0/25)' (BVCEO 40 V, BVCBO 60 V, BVEBO 10 V, ICM 0.5 A, VCEsat " +
+                    "<0.5 V at 300/6 mA, max ICBO 10 uA at VCB 10 V, stock no. 27708E carry no gain " +
+                    "information)",
+                derivation: "Printed hFE bin 50-150 at VCE/IC = 0/25 V/mA as printed (a printed VCE of 0 " +
+                    "V, transcribed as the table states it); IC = 25 mA is off the small-signal operating " +
+                    "point of a pedal stage (~1 mA), disclosed per the PN2222A precedent; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 150) = 86.6025404.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT219"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 143.1782106,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 219': 'hFE " +
+                    "(VCE/IC) (V/mA) 82 ... 250(4.5/1)*' (BVCBO 32 V, BVEBO 10 V, ICM 0.25 A, VCEsat <0.2 V " +
+                    "at 25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27709C carry no gain information)",
+                derivation: "Printed hFE bin 82-250; the asterisked row is the table's '*hfe (f = 1 kHz)' " +
+                    "small-signal bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the " +
+                    "2N2222A/2N5088 precedent (1 kHz is far below fT, so hfe approximates hFE); geometric " +
+                    "midpoint (form 2, gains): sqrt(82 * 250) = 143.1782106.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT223"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 223': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 200(4.5/1)' (BVCBO 30 V, BVEBO 10 V, ICM 0.5 A, VCEsat <0.2 V at " +
+                    "25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27710F carry no gain information)",
+                derivation: "Printed hFE bin 50-200 at VCE/IC = 4.5/1 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(50 * 200) = 100.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT224"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 51.9615242,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 224': 'hFE " +
+                    "(VCE/IC) (V/mA) 30 ... 90(4.5/1)' (BVCBO 30 V, BVEBO 10 V, ICM 0.5 A, VCEsat <0.2 V at " +
+                    "25/2.5 mA, max ICBO 10 uA at VCB 10 V, stock no. 27711D carry no gain information)",
+                derivation: "Printed hFE bin 30-90 at VCE/IC = 4.5/1 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(30 * 90) = 51.9615242.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT271"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 111.8033989,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 271': 'hFE " +
+                    "(VCE/IC) (V/mA) 50 ... 250(1.5/50)' (BVCBO 15 V, BVEBO 5 V, ICM 0.5 A, max ICBO 10 uA at " +
+                    "VCB 10 V, stock no. 15627E carry no gain information)",
+                derivation: "Printed hFE bin 50-250 at VCE/IC = 1.5/50 V/mA as printed; IC = 50 mA is off " +
+                    "the small-signal operating point of a pedal stage (~1 mA), disclosed per the PN2222A " +
+                    "precedent; geometric midpoint (form 2, gains): sqrt(50 * 250) = 111.8033989.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT272"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 56.1248608,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 272': 'hFE " +
+                    "(VCE/IC) (V/mA) 35 ... 90(4.5/1)*' (BVCBO 15 V, BVEBO 5 V, ICM 0.25 A, max ICBO 10 uA at " +
+                    "VCB 10 V, stock no. 15628C carry no gain information)",
+                derivation: "Printed hFE bin 35-90; the asterisked row is the table's '*hfe (f = 1 kHz)' small-signal " +
+                    "bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the 2N2222A/2N5088 precedent " +
+                    "(1 kHz is far below fT, so hfe approximates hFE); geometric midpoint (form 2, gains): " +
+                    "sqrt(35 * 90) = 56.1248608.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT274"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 143.1782106,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 274': 'hFE " +
+                    "(VCE/IC) (V/mA) 82 ... 250(4.5/1)*' (BVCBO 15 V, BVEBO 5 V, ICM 0.25 A, max ICBO 10 uA " +
+                    "at VCB 10 V, stock no. 15629A carry no gain information)",
+                derivation: "Printed hFE bin 82-250; the asterisked row is the table's '*hfe (f = 1 kHz)' " +
+                    "small-signal bin at VCE = 4.5 V, IC = 1 mA; admitted as the DC beta by the " +
+                    "2N2222A/2N5088 precedent (1 kHz is far below fT, so hfe approximates hFE); geometric " +
+                    "midpoint (form 2, gains): sqrt(82 * 250) = 143.1782106.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT281"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 102.4695077,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row 'NKT 281': 'hFE " +
+                    "(VCE/IC) (V/mA) 60 ... 175(1/300)' (BVCEO 16 V, BVCBO 32 V, BVEBO 10 V, ICM 1.0 A, max " +
+                    "ICBO 10 uA at VCB 10 V, stock no. 15631B carry no gain information)",
+                derivation: "Printed hFE bin 60-175 at VCE/IC = 1/300 V/mA as printed; IC = 300 mA is off " +
+                    "the small-signal operating point of a pedal stage (~1 mA), disclosed per the PN2222A " +
+                    "precedent; geometric midpoint (form 2, gains): sqrt(60 * 175) = 102.4695077.",
+            },
+        },
+    },
+    {
+        partIds: ["2N1305"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 89.4427191,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row '2N1305': 'hFE " +
+                    "(VCE/IC) (V/mA) 40 ... 200(1/10)' (BVCEO 20 V, BVCBO 25 V, BVEBO 25 V, ICM 0.3 A, stock " +
+                    "no. 34599X carry no gain information)",
+                derivation: "Printed hFE bin 40-200 at VCE/IC = 1/10 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(40 * 200) = 89.4427191.",
+            },
+        },
+    },
+    {
+        partIds: ["2N1307"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 134.1640786,
+                basis: "derived",
+                source: "Newmarket Semiconductors 'Germanium Alloy Transistors' PNP REFERENCE TABLE ('Maximum " +
+                    "ratings. Characteristics at TA = 25°C'; one-page catalogue scan, page 1065, section tab " +
+                    "7, DatasheetArchive-hosted PDF; local copy " +
+                    "workbench/tmp/newmarket-germanium-transistor-datasheet.pdf, read 2026-11-02; the table " +
+                    "prints no Vbe figure for any part, so no IS derivation exists), row '2N1307': 'hFE " +
+                    "(VCE/IC) (V/mA) 60 ... 300(1/10)' (BVCEO 15 V, BVCBO 25 V, BVEBO 25 V, ICM 0.3 A, stock " +
+                    "no. 34600A carry no gain information)",
+                derivation: "Printed hFE bin 60-300 at VCE/IC = 1/10 V/mA as printed; geometric midpoint " +
+                    "(form 2, gains): sqrt(60 * 300) = 134.1640786.",
+            },
+        },
+    },
+    {
+        // NKT275 (2026-11-02): community, published measurement. Not on the Newmarket reference
+        // table above; Newmarket's own figure is MIN-only hFE 30 (wave 7 left it out for that
+        // reason). Amplified Parts curve-traced two original white-dot specimens and published the
+        // raw DCA75 data, so both parameters are read from the raw rows nearest IC = 1 mA on the
+        // VCE = 5 V traces (a pedal stage's operating region), one row per specimen, pooled by
+        // geometric mean. Two specimens only, 2.7x apart in gain: provisional, and the compiler
+        // names every device that runs on it. The ZVex Fuzz Factory packet declares its own
+        // NKT275 overrides (BF 85/125), which take precedence over this row. Polarity is
+        // structural (PNP).
+        partIds: ["NKT275"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        note: "Two-specimen pooled values. Q1 reads hFE 53.7 / IS 1.33e-6 and Q2 hFE 143.5 / IS 2.38e-6 " +
+            "at IC ~ 1 mA, VCE = 5 V; Q2 carries 34 uA leakage (article), ~3% of the 1 mA row.",
+        params: {
+            saturationCurrent: {
+                value: 1.778757e-6,
+                basis: "community",
+                source: "Amplified Parts, Tech Corner article 'Newmarket NKT275 White Dot Transistor " +
+                    "Measurements', " +
+                    "https://www.amplifiedparts.com/tech-articles/newmarket-nkt275-measurements (read " +
+                    "2026-11-02): two original Newmarket NKT275 (white dot) specimens from an early Cornell " +
+                    "First Fuzz, curve-traced on a Peak DCA75 ('All measurements were taken with the " +
+                    "transistors stabilized to room temperature. The room measured 77°F'; 'In the First Fuzz, " +
+                    "Q1 had zero leakage while Q2 had 34µA'), raw data published as " +
+                    "https://www.amplifiedparts.com/sites/all/modules/custom/tech_corner/data/nkt275-raw-data.zip " +
+                    "(local copy parts/bjts/NKT275/datasheets/nkt275-raw-data.zip); raw rows: " +
+                    "Q1_4_Ic_vbe.txt, trace 'Q1, Vce=5V', point 17: 'Vbe 0.173673629760742, Ic (mA) " +
+                    "1.10184299945831'; Q2_4_ic_vbe.txt, trace 'Vce=5V', point 20: 'Vbe 0.156471252441406, Ic " +
+                    "(mA) 1.00995790958405'. IS per specimen by form 1 (IS = IC * exp(-Vbe / Vt), n = 1, Vt = " +
+                    "0.025852): Q1 1.10184299945831e-3 * exp(-0.173673629760742 / 0.025852) = 1.332083e-6; Q2 " +
+                    "1.00995790958405e-3 * exp(-0.156471252441406 / 0.025852) = 2.375210e-6; pooled geometric " +
+                    "mean sqrt(1.332083e-6 * 2.375210e-6) = 1.778757e-6 (Vbe-equivalent 0.1637 V at 1 mA).",
+                sourceKind: "published-measurement",
+                url: "https://www.amplifiedparts.com/tech-articles/newmarket-nkt275-measurements",
+                quote: "Q1_4_Ic_vbe.txt, trace 'Q1, Vce=5V', point 17: 'Vbe 0.173673629760742, Ic (mA) " +
+                    "1.10184299945831'; Q2_4_ic_vbe.txt, trace 'Vce=5V', point 20: 'Vbe 0.156471252441406, Ic " +
+                    "(mA) 1.00995790958405'",
+                author: "Amplified Parts (Tech Corner)",
+                retrievedDate: "2026-11-02",
+                whyNoBetterSource: "Newmarket's own NKT275 data (every located copy: alltransistors, datasheetarchive index " +
+                    "entries, distributor listings) is MIN-only hFE 30 with no Vbe row, and the Newmarket " +
+                    "'Germanium Alloy Transistors' reference table carries no NKT275 row at all; no " +
+                    "manufacturer SPICE model exists (Newmarket is defunct); no owner bench measurement; the " +
+                    "Holmes/Holters/van Walstijn DAFx-2017 extractions cover OC44 and AC128 only. A published " +
+                    "two-specimen curve-tracer dataset with downloadable raw numbers is the best available " +
+                    "source; both specimens are quoted so the pooled value can be recomputed, and germanium " +
+                    "spread is disclosed (the two gains differ 2.7x).",
+            },
+            forwardBeta: {
+                value: 87.7666273,
+                basis: "community",
+                source: "Amplified Parts, Tech Corner article 'Newmarket NKT275 White Dot Transistor " +
+                    "Measurements', " +
+                    "https://www.amplifiedparts.com/tech-articles/newmarket-nkt275-measurements (read " +
+                    "2026-11-02): two original Newmarket NKT275 (white dot) specimens from an early Cornell " +
+                    "First Fuzz, curve-traced on a Peak DCA75 ('All measurements were taken with the " +
+                    "transistors stabilized to room temperature. The room measured 77°F'; 'In the First Fuzz, " +
+                    "Q1 had zero leakage while Q2 had 34µA'), raw data published as " +
+                    "https://www.amplifiedparts.com/sites/all/modules/custom/tech_corner/data/nkt275-raw-data.zip " +
+                    "(local copy parts/bjts/NKT275/datasheets/nkt275-raw-data.zip); raw rows: " +
+                    "Q1_3_hfe_ic.txt, trace 'Q1, Vce=5V', point 18: 'Ic (mA) 1.01584208011627, hFE " +
+                    "53.6911282492335'; Q2_3_hfe_ic.txt, trace 'Vce=5V', point 3: 'Ic (mA) 0.977419555187225, " +
+                    "hFE 143.468411103812'. Pooled geometric mean (form 2, gains, over the two specimens): " +
+                    "sqrt(53.6911282492335 * 143.468411103812) = 87.7666273.",
+                sourceKind: "published-measurement",
+                url: "https://www.amplifiedparts.com/tech-articles/newmarket-nkt275-measurements",
+                quote: "Q1_3_hfe_ic.txt, trace 'Q1, Vce=5V', point 18: 'Ic (mA) 1.01584208011627, hFE " +
+                    "53.6911282492335'; Q2_3_hfe_ic.txt, trace 'Vce=5V', point 3: 'Ic (mA) 0.977419555187225, " +
+                    "hFE 143.468411103812'",
+                author: "Amplified Parts (Tech Corner)",
+                retrievedDate: "2026-11-02",
+                whyNoBetterSource: "Newmarket's own NKT275 data (every located copy: alltransistors, datasheetarchive index " +
+                    "entries, distributor listings) is MIN-only hFE 30 with no Vbe row, and the Newmarket " +
+                    "'Germanium Alloy Transistors' reference table carries no NKT275 row at all; no " +
+                    "manufacturer SPICE model exists (Newmarket is defunct); no owner bench measurement; the " +
+                    "Holmes/Holters/van Walstijn DAFx-2017 extractions cover OC44 and AC128 only. A published " +
+                    "two-specimen curve-tracer dataset with downloadable raw numbers is the best available " +
+                    "source; both specimens are quoted so the pooled value can be recomputed, and germanium " +
+                    "spread is disclosed (the two gains differ 2.7x).",
+            },
+        },
+    },
+    {
+        // Towers' selector p239 (2026-11-03): the NKT122-NKT275J page of the compilation.
+        // Only the rows whose HFE column prints a typical (TP) are taken, transcribed at the
+        // stated HFE BIAS current (a TYP is one value, no midpoint); the MN (minimum-only)
+        // rows -- NKT122-129, 133-142, 210-275J -- are limits and stay out, which is also why
+        // the NKT213/214/216/217/219/223/224/271/272/274 rows above keep their Newmarket
+        // reference-table bins and NKT275 its community row. The book is a compilation of
+        // maker data, disclosed in every citation; no Vbe column, so no IS (OC75 bias caveat).
+        // NKT202/207 (25 mA) and NKT208 (500 mA) are off the ~1 mA pedal operating point,
+        // disclosed. Polarity is structural (PNP: the PM/OA/LT column reads PG).
+        partIds: ["NKT131"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 50,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT131': 'PG T022 L39 15V 15V . 25MA 75C 125MWF 8M 30P 50TP " +
+                    "1MA RLG OBS OC44N 2N2614 0' -- HFE 50TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 50 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT132"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 40,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT132': 'PG T022 L39 15V 15V . 25MA 75C 125MWF 4M 30P 40TP " +
+                    "1MA RLG OBS OC44N 2N2614 0' -- HFE 40TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 40 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT143"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT143': 'PG T05 L04 15V 12V 12V 25MA 75C 125MWF 3M 35P 100TP " +
+                    "1MA RLA NEM ASY27 2N1305 0' -- HFE 100TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 100 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT144"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT144': 'PG T05 L04 15V 12V 12V 25MA 75C 125MWF 3M 35P 100TP " +
+                    "1MA ALN NEM ASY27 2N1305 0' -- HFE 100TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 100 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT151"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 150,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT151': 'PG T022 L39 6V 6V . 10MA 75C 75MWF 8M 30P 150TP 1MA " +
+                    "RLG OBS OC44N 2N2614 0' -- HFE 150TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR and " +
+                    "equivalents columns carry no gain information). Printed hFE TYP 150 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT152"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT152': 'PG T022 L39 6V 6V . 10MA 75C 75MWF 4M 30P 100TP 1MA " +
+                    "RLG OBS ASY27 2N1305 0' -- HFE 100TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR and " +
+                    "equivalents columns carry no gain information). Printed hFE TYP 100 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT154/25"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 50,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT154/25': 'PG T022 L39 6V 6V 6V 10MA 75C 75MWF 2M 30P 50TP " +
+                    "1MA RLG OBS ASY27 2N1305 0' -- HFE 50TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 50 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT162"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT162': 'PG T05 L02 9V 9V 9V 25MA 75C 75MWF 8M 30P 100TP 1MA " +
+                    "RLA NEM ASY27 2N1305 0' -- HFE 100TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR and " +
+                    "equivalents columns carry no gain information). Printed hFE TYP 100 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT163"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 80,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT163': 'PG T05 L02 9V 9V 9V 25MA 75C 75MWF 5M 30P 80TP 1MA " +
+                    "RLA NEM ASY27 2N1305 0' -- HFE 80TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR and " +
+                    "equivalents columns carry no gain information). Printed hFE TYP 80 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT163/25"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 80,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT163/25': 'PG T05 L02 9V 9V 9V 25MA 75C 75MWF 5M 30P 80TP " +
+                    "1MA RLA NEM ASY27 2N1305 0' -- HFE 80TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 80 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT164"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 50,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT164': 'PG T05 L02 9V 9V 9V 25MA 75C 75MWF 3M 30P 50TP 1MA " +
+                    "RLA NEM ASY27 2N1305 0' -- HFE 50TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR and " +
+                    "equivalents columns carry no gain information). Printed hFE TYP 50 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT164/25"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 50,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT164/25': 'PG T05 L02 9V 9V 9V 25MA 75C 75MWF 3M 30P 50TP " +
+                    "1MA RLA NEM ASY27 2N1305 0' -- HFE 50TP at HFE BIAS 1MA (the ratings, FT, COB, USE, MFR " +
+                    "and equivalents columns carry no gain information). Printed hFE TYP 50 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT202"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 150,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT202': 'PG T022 L39 30V 18V 10V 125MA 75C 180MWF 500K 60P " +
+                    "150TP 25MA AMG OBS AC128 2N2706 0' -- HFE 150TP at HFE BIAS 25MA (the ratings, FT, COB, " +
+                    "USE, MFR and equivalents columns carry no gain information). Printed hFE TYP 150 at IC = " +
+                    "25 mA, transcribed (no midpoint: a TYP is already one value); IC = 25 mA is off the " +
+                    "small-signal operating point of a pedal stage (~1 mA), disclosed per the PN2222A " +
+                    "precedent.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT203"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 45,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT203': 'PG T022 L39 30V 18V 10V 125MA 75C 180MWF 500K 60P " +
+                    "45TP 1MA AMG OBS AC128 2N2706 0' -- HFE 45TP at HFE BIAS 1MA (the ratings, FT, COB, USE, " +
+                    "MFR and equivalents columns carry no gain information). Printed hFE TYP 45 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT204"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 35,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT204': 'PG T022 L39 30V 18V 10V 125MA 75C 180MWF 500K 60P " +
+                    "35TP 1MA AMG OBS AC128 2N2706 0' -- HFE 35TP at HFE BIAS 1MA (the ratings, FT, COB, USE, " +
+                    "MFR and equivalents columns carry no gain information). Printed hFE TYP 35 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT205"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 30,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT205': 'PG T022 L39 30V 18V 10V 125MA 75C 180MWF 500K 60P " +
+                    "30TP 1MA AMG OBS AC128 2N2706 0' -- HFE 30TP at HFE BIAS 1MA (the ratings, FT, COB, USE, " +
+                    "MFR and equivalents columns carry no gain information). Printed hFE TYP 30 at IC = 1 mA, " +
+                    "transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT206"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 100,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT206': 'PG T022 L39 30V 18V 10V 125MA 75C 180MWF 500K 60P " +
+                    "100TP 1MA AMG OBS AC128 2N2706 0' -- HFE 100TP at HFE BIAS 1MA (the ratings, FT, COB, " +
+                    "USE, MFR and equivalents columns carry no gain information). Printed hFE TYP 100 at IC = " +
+                    "1 mA, transcribed (no midpoint: a TYP is already one value).",
+            },
+        },
+    },
+    {
+        partIds: ["NKT207"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 150,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT207': 'PG T022 L39 60V 45V 10V 125MA 75C 180MWF 500K 60P " +
+                    "150TP 25MA AMG OBS AC128 2N2706 0' -- HFE 150TP at HFE BIAS 25MA (the ratings, FT, COB, " +
+                    "USE, MFR and equivalents columns carry no gain information). Printed hFE TYP 150 at IC = " +
+                    "25 mA, transcribed (no midpoint: a TYP is already one value); IC = 25 mA is off the " +
+                    "small-signal operating point of a pedal stage (~1 mA), disclosed per the PN2222A " +
+                    "precedent.",
+            },
+        },
+    },
+    {
+        partIds: ["NKT208"],
+        class: "bjt",
+        material: "germanium", // The cited record identifies a germanium junction (Mullard pocket book, Newmarket reference table, or manufacturer sheet).
+        params: {
+            forwardBeta: {
+                value: 70,
+                basis: "datasheet",
+                source: "Towers' International Transistor Selector (T. D. Towers, W. Foulsham & Co; a compilation " +
+                    "of maker data, not a Newmarket sheet -- edition not identifiable from the single scanned " +
+                    "page), p239 'NKT122 ... NKT275J' (DatasheetArchive scan DSA841000-47; local copy " +
+                    "newmarket/datasheets/towers-international-transistor-selector-p239-nkt122-nkt275j.pdf, " +
+                    "read 2026-11-03). Columns: PM/OA/LT, PACKAGE, LEAD INFO, VCB MAX, VCE MAX, VEB MAX, IC " +
+                    "MAX, TJ MAX, P TOT, FT MIN, COB MAX, HFE, HFE BIAS, USE, MFR, EUR EQUIV, USA EQUIV, ISS; " +
+                    "the HFE column prints MN (minimum) or TP (typical) at the HFE BIAS collector current; no " +
+                    "Vbe column, so no IS; row 'NKT208': 'PG T022 L39 30V 18V 10V 500MA 75C 300MWF 500K 60P " +
+                    "70TP 500MA AMG OBS AC128 2N2706 0' -- HFE 70TP at HFE BIAS 500MA (the ratings, FT, COB, " +
+                    "USE, MFR and equivalents columns carry no gain information). Printed hFE TYP 70 at IC = " +
+                    "500 mA, transcribed (no midpoint: a TYP is already one value); IC = 500 mA is off the " +
+                    "small-signal operating point of a pedal stage (~1 mA), disclosed per the PN2222A " +
+                    "precedent.",
+            },
+        },
+    },
 ]);
 //# sourceMappingURL=bjt.js.map